Nordic Semiconductor nRF52832

Courtesy of Nordic Semiconductor nRF52832 – Read more here

Advanced performance Bluetooth5/ANT/2.4GHz proprietary SoC

The nRF52832 SoC is a powerful, highly flexible ultra-low power multiprotocol SoC ideally suited for Bluetooth® low energy (previously called Bluetooth Smart), ANT and 2.4GHz ultra low-power wireless applications. The nRF52832 SoC is built around a 32-bit ARM® Cortex™-M4F CPU with 512kB + 64kB RAM. The embedded 2.4GHz transceiver supports Bluetooth low energy, ANT and proprietary 2.4 GHz protocol stack. It is on air compatible with the nRF51 Series, nRF24L and nRF24AP Series products from Nordic Semiconductor.
Bluetooth 5

The nRF52832 has hardware support on-chip for Bluetooth 5. This includes high throughput and advertising extension.

Bluetooth 5 high throughput
Bluetooth 5 advertising extension supported
Bluetooth5_improved coexistence

Processing power

The nRF52832 incorporates a powerful Cortex-M4F processor enabling the most demanding applications with complex arithmetic requirements to be realized in a single chip solution. The IC supports DSP instructions, a Floating Point Unit (FPU), single-cycle multiply and accumulate, and hardware divide for energy-efficient process of computationally complex operations.

Multiprotocol radio

The 2.4GHz radio supports multiple protocols including Bluetooth Low Energy, ANT and 2.4GHz proprietary. The radio has high definition RSSI and highly automated functionality, including EasyDMA for direct memory access during packet send and retrieve. Nordic provides protocol stacks for Bluetooth Low Energy. ANT protocol stacks are available from ANT here:

Power Efficiency

The nRF52832 SoC is an extremely power efficient device that can run from a supply between 1.7V and 3.6V. All individual peripherals and clocks offer complete flexibility of power down when not required for task operation thus minimizing power consumption to a minimum. The IC has a comprehensive system of automated and adaptive power management features. These features range across the entire IC’s operation from power supply switching to peripheral bus/EasyDMA memory management, to automated shut down of all but the absolute essential peripherals required to perform a task.

On-chip NFC tag

NFC™-A tag support is included on chip. Out-of-Band (OOB) pairing using NFC simplifies the process of authenticated pairing between two Bluetooth devices by exchanging authentication information over an NFC link.

Package options

The nRF52832 is available in 6x6mm 48-pin QFN packages and 3.0×3.2mm ultra-compact wafer-level chip-scale packages (WL-CSP).


The nRF52832 is supported by the S132 SoftDevice, a Bluetooth 5 pre-qualified protocol stack. Click for more information on nRF52 Series in our Infocenter


  • Single chip, highly flexible, 2.4 GHz multi-protocol SoC
  • 32-bit ARM Cortex-M4F Processor
  • 1.7v to 3.6v operation
  • 512kB flash + 64kB RAM
  • Supports concurrent Bluetooth low energy/ANT protocol operation
  • On-chip NFC tag for Out-of-Band (OOB) pairing
  • Up to +4dBm output power
  • -96dBm sensitivity, Bluetooth low energy
  • Thread safe and run-time protected
  • Event driven API
  • On air compatible with nRF24L and nRF24AP series
  • 2 data rates (2Mbps/1Mbps)
  • PPI – maximum flexibility for power-efficient applications and code simplification
  • Automated power management system with automatic power management of each peripheral
  • Configurable I/O mapping for analog and digital I/O
  • 3 x Master/Slave SPI
  • 2 x Two-wire interface (I²C)
  • 3 x PWM
  • AES HW encryption
  • 12-bit ADC
  • Real Time Counter (RTC)
  • Digital microphone interface (PDM)
  • On-chip balun


  • Internet of Things (IoT)
  • Wearables
  • SmartHome sensors
  • Connected white goods
  • Computer peripherals
  • Voice-command smart remotes
  • A4WP ‘Rezence’ wireless charging
  • Beacons
  • Sports and fitness sensors and hubs
  • Connected health products
  • Smart watches
  • RC Toys
  • Interactive games
  • Building automation and sensor networks


Product Brief Description
nRF5 SDK for Mesh Software Development Kit for Bluetooth mesh solutions using nRF51 Series and nRF52 Series
nRF52840 Multi-protocol Bluetooth 5/Bluetooth Low Energy/ANT/2.4GHz SoC
nRF52810 Multi-protocol Bluetooth 5/Bluetooth Low Energy/ANT/2.4GHz SoC
S132 Bluetooth 5 protocol stack for nRF52832
nRF52 DK Development kit for nRF52832 SoC
Nordic Thingy:52 IoT Sensor Kit with nRF52832 SoC
nRF5 SDK Software Development Kit for nRF51 and nRF52 Series
nRF5 SDK for IoT IoT Software Development Kit (SDK) for applications using IPv6 over Bluetooth Low Energy
nRF5 SDK for HomeKit Software Development Kit for HomeKit solutions
nRF5 SDK for AirFuel Software Development Kit for Airfuel-compliant wireless charging applications
nRF Sniffer Low cost Bluetooth Low Energy packet sniffer
nRFready Smart Remote 3 for nRF52 Series Advanced smart remote reference design with outstanding voice input features

Nordic-powered module offers efficient UART-to-Bluetooth Low Energy connectivity, high link budget, and flexible data rates

Courtesy of Nordic Semiconductor – Read full article here: Nordic-powered module offers efficient UART-to-Bluetooth Low Energy connectivity

nRF51 Series Bluetooth LE SoC supports cost-effective ‘drop-in’ modular solution for healthcare, gaming, and IoT applications

Nordic Semiconductor today announces that LITE-ON, a Taipei, Taiwan-based optoelectronics developer, has selected Nordic’s Bluetooth® Low Energy (Bluetooth LE) nRF51 Series System-on-Chip (SoC) as the basis of its LITE-ON WB100N module. The module provides a UART-to-Bluetooth LE wireless connectivity solution for various applications including medical devices, remote controls, gaming controllers, and Internet of Things (IoT) peripherals.

The nRF51 Series SoC offers a superior price/performance ratio that allows LITE-ON to offer a cost-effective “drop-in” modular wireless connectivity solution for a diverse range of customer applications. The SoC enables the WB100N module to support 250-kbps, 1-Mbps, and 2-Mbps raw data rates, and -97-dBm link budget (+4-dBm output and -93-dBm sensitivity). In addition to the UART I/O, the module offers an I2C-compatible interface and supports battery service, RSSI reports, AT commands, and password protection.

Nordic’s nRF51 Series is a family of flexible multiprotocol SoCs ideally suited for Bluetooth LE and 2.4GHz proprietary ultra low-power wireless applications. The nRF51 Series SoCs are built around a 32-bit ARM® Cortex™ M0 CPU, 2.4GHz multiprotocol radio, and 256kB/128kB Flash and 32kB/16kB RAM. The SoCs’ ample Flash memory allocation supports over-the-air device firmware updates (OTA-DFU), allowing manufacturers to upgrade software over the wireless link once the product is in the field. The SoCs are supplied with Nordic’s S130 SoftDevice, a Bluetooth 4.2 qualified concurrent multilink protocol stack solution supporting simultaneous Central/Peripheral/Broadcaster/Observer role connections.

“We chose Nordic’s nRF51 Series SoCs for their hardware features such as the reduced size, competitive price, and wide availability, as well as impressive technical features including the radio sensitivity and ultra low power consumption,” says Vic Lin, Senior Specialist at LITE-ON. “From a software perspective, the availability of Nordic’s user-friendly Software Development Kits [SDKs] also played an important role in our decision.

“Nordic provided the technical information, reference designs, and rapid response times we were looking for.”

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Advanced MMICs Aid in Reducing Size and Power in Phased Array Radar Systems

Advanced MMICs Aid in Reducing Size and Power in Phased Array Radar Systems

Courtesy of Custom MMIC  Read more here : Advanced MMICs Aid in Reducing Size and Power

Phased-array radar systems are important instruments in national electronic defense strategies. From the large, ship-based systems that scan for distantly launched missiles to the more compact arrays installed on fighter aircraft and unmanned aerial vehicles (UAVs), electronic phased-array radars come in many sizes and forms, providing reliable signal detection and identification. These modern systems offer many advantages over earlier radar systems that relied on the physical movement of an antenna to steer a radar beam in search of a target. This earlier method is certainly proven and reliable, having been used in military platforms and commercial aviation for over 70 years, but it is limited in scan rate by the mechanical motion of the antenna. In contrast, a phased-array radar system uses many equally spaced antenna elements with phase shifters, with each element contributing a small amount of electromagnetic (EM) radiation to form a much larger beam. As the phase of each antenna element is shifted and aligned, the direction of the radar beam changes and, as the amplitude of each element is varied, the pattern of the far-field response is shaped into the desired response. Thus, the overall radar antenna beam can be steered without need of a mechanically rotated antenna. Beam forming, which can be now performed by means of analog or digital control, can take place at extremely high speeds, limited only by the switching speed of electronic components.

Historically, phased-array radar systems have been large in both cost and weight. With the explosive growth of UAVs and unmanned ground vehicles (UGVs) as key elements of the defense arsenal, the need for lighter phased-array radar systems in these weight-sensitive systems will continue to grow. In addition, the increased use of such radars for non-military applications, such as tornado detection by the US National Weather Service (Springfield, MO), is helping drive the demand for lower-cost systems. Fortunately, these growing demands placed on phased-array radar systems can be met with the help of modern RF/microwave integrated-circuit (IC) and monolithic-microwave-integrated-circuit (MMIC) technologies.


The benefits of phased-array radar systems far outweigh their limitations, thus accounting for their growing use in many military electronic systems and platforms. Since beam steering in phased arrays can be performed at millisecond and faster speeds, the signal can jump from one target to the next very quickly, while frequency agility can be used to search quickly across a sector for targets. The coverage of a phased-array antenna beam is typically limited to a 120-deg. sector in azimuth and elevation. While this response is a known limitation of phased arrays, mechanically scanned radar systems also have limitations in the physical area available for the motion of the antenna. Important factors hindering the adoption of phased-array radar systems in many applications continue to be size, weight, power, and cost (SWAP-C). Efforts aimed at minimizing these four attributes represent a significant technological challenge that until recently has seemed a rather formidable hurdle. Phased array radars are, after all, quite complex and even growing in this regard as target identification becomes more difficult. How can SWAP-C reduction be accomplished?


 (Figure 1)

A phased-array radar system (Fig. 1) is constructed from large numbers (often thousands) of transmit/receive (T/R) modules which enable the array to function as both a transmitter and a receiver. Initially designed with discrete hybrid components such as amplifiers, filter, mixers, phase shifters, and switches, these modules are now more commonly fabricated with high-frequency IC or MMIC technology. This switchover to IC technology has provided tremendous benefits in terms of SWAP-C reduction, but simply replacing components can only get a designer so far. Gaining additional SWaP-C benefits in any phased-array radar system also requires knowledge of how to best apply available IC and MMIC technologies to the system (Fig. 2). In fact, the key characteristics of size, weight, and power consumption in a phased-array radar system can usually be minimized by analyzing the design at the circuit, system, and technology levels.

Analysis at the technology level first involves a choice of semiconductor material. Modern commercial semiconductor foundries typically offer a number of different material technologies, but a choice among these is not always straightforward. Components in high-frequency T/R modules typically include high-power amplifiers (HPAs) for transmit purposes, low-noise amplifiers (LNAs) for receiving purposes, mixers and oscillators for signal translation (frequency upconversion and downconversion), and attenuators, filters, and switches for signal conditioning. Fabricating MMICs for all of these functions will likely require more than one semiconductor technology. For example, processes based on silicon-carbide (SiC) or gallium nitride (GaN) substrates will excel in higher-power portions of the system such as transmit functions, while processes using silicon-germanium (SiGe) or gallium-arsenide (GaAs) materials will exhibit lower noise for better performance in receiver functions.

Analysis at the system and circuit levels should be closely intertwined, as a system is only as good as the sum of its components. Unfortunately, the vast majority of IC and MMIC circuit suppliers do not give enough consideration to any specific system, opting instead to create generic components that can be used across wide reaching applications. Such an approach, while cost-effective in terms of IC and MMIC development, is not always optimal in reducing SWaP-C since these components cannot be easily customized for use in phased array systems.

Forward-thinking MMIC suppliers, such as Custom MMIC, have worked on approaches that combine technology, system, and circuit analysis to create components that resolve SWaP-C challenges in phased array systems. At the technology level, they have worked with nearly all of the world’s commercial III-V semiconductor foundries, and have intimate knowledge of some of the newest processes including optical pHEMT and high frequency GaN. At the system level, they have been engaged with numerous phased array designers and have heard first-hand how yesterday’s components are holding back development of next-generation low cost, low weight, high performance systems. At the circuit level, they have created an extensive intellectual property (IP) design library of components in both die and packaged form that are used as a starting point for advanced signal chain design and optimization.

As an example, one place where they have focused significant development is the transmit HPA, a common component required in almost every application. At microwave and millimeter-wave frequencies, the transmit amplifier is often fabricated from a depletion mode pHEMT process, a highly efficient and mature technology. However, depletion mode pHEMT is not without its drawbacks, most notably the need for negative gate voltage and a sequencing procedure to ensure the gate voltage is applied before the drain voltage, lest the FET device suffer irreparable harm. By their very nature, negative voltages and sequencing circuits for HPAs are expensive in terms of complexity, board space, and cost of the extra components. In phased arrays, especially ones with thousands of elements, such HPAs place enormous strain on the system as a whole and offer significant barriers to SWaP-C reduction. Therefore, as part of a Small Business Innovative Research grant (SBIR) from the U. S. Army, they attacked this problem for the transmit portion of an X-band phased array system. Rather than utilize depletion mode pHEMT, they turned to enhancement mode pHEMT for the HPA, a technology often relegated to other applications such as high-speed logic circuitry or switches. In enhancement mode, the pHEMT is normally off until a positive voltage is applied to the gate. Negative voltages are no longer required, nor are voltage sequencers, since either the control or the drain voltage can be applied first; the amplifier will not turn on until both are present. In the end, they were able to replace the existing depletion mode PA with an enhancement mode design that delivered 5 dB more gain, 1 dB more power, and 2 dB improved linearity, all while dissipating 25% less DC power. In terms of SWaP-C, the benefits of enhancement mode PAs are enormous, and offer a significant breakthrough for microwave system designers in general.

A second problem they considered was the receiver LNA in an X-band phased array system as part of a separate SBIR contract. Here, they also switched from a depletion mode to an enhancement mode process, thereby eliminating the negative voltages and sequencers of the existing solution. Their resulting design had 1 dB lower noise figure, 8 dB more gain, an eight-fold reduction in DC power, and half the unit cost of the existing depletion mode solution. However, they soon encountered an application that called for a pair of relatively well-matched LNAs, one for each of the two polarizations in the return signal. Starting with their enhancement mode LNA, they created a dual version on one MMIC die, thereby guaranteeing a matched pair. They also worked with their packaging vendor to develop a low cost rectangular QFN plastic package to best match the resulting die size. The end result was a “standard” product that was anything but ordinary, as it combined innovation at the circuit, system, and technological levels to deliver a component with significant impact on SWaP-C.

Moving forward, they are continuing to develop components for phased array radar systems and similarly challenged 5G wireless systems. Using other technologies such as high frequency GaN, and a combination of different semiconductor devices in multi-chip modules, they’re looking to help designers when digital control functions must be integrated with higher frequency functions.

“We’re learning more everyday about phased array radar and antenna system design challenges,“ says Custom MMIC CSO, Charles Trantanella. “Our product design approach has always been to listen and react, and we’re very pleased to have been able to not only deliver the high frequency performance specifications phased array system designers were looking for, but also the added-value of things like positive bias and positive gain slope characteristics that are proving invaluable in their quest to meet SWaP-C objectives.”

To learn more, download the Tech Brief: “Simplify Amplifier Biasing Using Positive Bias pHEMT MMICs

For application engineering assistance and additional technical resources, visit:

GaN low noise amplifiers

New GaN Low Noise Amplifiers with High Input Power Handling

Courtesy of everything RF – Read full article here : New GaN Low Noise Amplifiers with High Input Power Handling

Custom MMIC has released three new unique GaN low noise amplifiers (LNAs) with easy to use evaluation boards.

The new GaN MMIC LNAs, CMD276C4CMD277C4and CMD278C4 deliver high linearity performance with output IP3 of +32 dBm while offering high input power handling capabilities of up to 5W. The high input power handling feature enables system designers to avoid limiters and other protection networks, while still achieving an extremely low noise figure over the operating bandwidth. The MMIC LNAs are housed in a leadless 4×4 mm QFN package. They are ideally suited for radar and electronic warfare (EW) applications where high performance and high input power survivability are required.

The CMD276C4 is a 2.6 to 4 GHz (S Band) LNA delivering greater than 14 dB of gain with a corresponding output 1 dB compression point of +25.5 dBm and a noise figure of 1.2 dB.

The CMD277C4 is a 5 to 7 GHz (C Band) LNA with 20 dB of gain, output 1 dB compression point of +26.5 dBm and a noise figure of 1.2 dB.

The CMD278C4 is a broadband 8-12 GHz (X Band) LNA with 15 dB of gain, output 1 dB compression point of +28 dBm and a noise figure of 1.8 dB.

Click here to see more the range of amplifiers from Custom MMIC.

Nordic Semiconductor nRF52840

Nordic Semiconductor nRF52840

Courtesy of Nordic Semiconductor nRF52840 – view more here

Advanced multi-protocol SoC supporting Bluetooth 5/ANT/ 802.15.4/ 2.4GHz proprietary

The nRF52840 is an advanced multi-protocol SoC ideally suited for ultra low-power wireless applications. The nRF52840 SoC is built around a 32-bit ARM® Cortex™-M4F CPU with 1MB flash and 256kB RAM on chip. The embedded 2.4GHz transceiver supports Bluetooth® low energy (Bluetooth 5), 802.15.4, ANT and proprietary 2.4GHz protocols. It is on-air compatible with existing nRF52 Series, nRF51 Series, and nRF24 Series products from Nordic Semiconductor.

Bluetooth 5

The nRF52840 has hardware support on-chip for Bluetooth 5. This includes long range, high throughput, advertising extensions and improved coexistence. It supports all Bluetooth low energy physical layer bit rates and modulation schemes.


Processing power

The nRF52840 incorporates a powerful Cortex-M4F processor running at 64 MHz enabling the most demanding applications with complex arithmetic requirements to be realized in a single chip solution. This CPU configuration supports DSP instructions, HW accelerated Floating Point Unit (FPU) calculations, single-cycle multiply and accumulate, and hardware divide for energy-efficient processing complex operations.

Multiprotocol radio

The 2.4GHz radio supports multiple protocols including Bluetooth low energy, ANT, 802.15.4 and 2.4GHz proprietary. It supports Bluetooth low energy 2Mbs and 1Mbs and Bluetooth 5 long range (500kbs and 125kbs). The radio supports high resolution RSSI measurement and automated functions to reduce CPU load, including EasyDMA for direct memory access for packet data and assembly. Nordic provides protocol stacks for Bluetooth low energy. ANT protocol stacks are available from ANT.

Memory to expand

The nRF52840 has extensive on-chip memory in both flash (1MB) and RAM (256kB) offering powerful possibilities for today’s advanced wireless applications.

Power Efficiency

The nRF52840 SoC employs power and resource management to maximize application energy efficiency and battery life. The supply range between 1.7V and 5.5V supports primary and secondary cell battery technologies and direct USB supply without the need for external regulators. All peripherals have independent and automated clock and power management to ensure they are powered down when not required for task operation to keep power consumption to a minimum without the application having to implement and test complex power management schemes.The nRF52840 has a comprehensive system of automated and adaptive power management features. These features are built into all aspects of device operation from power supply switching, to peripheral bus/EasyDMA memory management, and automated shut down of all but the absolute essential peripherals required to perform a task.

ARM® TrustZone® Cryptocell-310

ARM Cryptocell-310 is a powerful on-chip cryptographic co-processor providing cryptographic functions and services to speed up operations significantly, save CPU processing time and reduce energy consumption. It incorporates a true random number generator (TRNG) and support for a wide range of asymmetric, symmetric and hashing cryptographic services for secure applications.

On-chip NFC tag

NFC™-A tag support is included on chip. NFC Type 2 and Type 4 tag emulation protocol stacks are provided by Nordic opening up a range of new applications, like NFC payment, and improved user experience for existing BLE applications with Out-of-Band (OOB) pairing. OOB pairing using NFC simplifies the process of authenticated pairing between two Bluetooth devices by exchanging authentication information over an NFC link.

USB 2.0

The nRF52840 has on-chip USB 2.0 (Full speed) support and on-chip VBUS regulation allowing for direct connection to USB hosts for data transfer and direct USB power for hosted applications.

Package options

The nRF52840 is available in 7x7mm 73pin AQFN package with 48 available GPIO.


The Nordic protocol stacks are known as SoftDevices. The nRF52840 is supported by the S140 SoftDevice. The S140 SoftDevice is a Bluetooth 5 pre-qualified Bluetooth low energy protocol stack.

MT3H-0113LSM RF Mixer by Marki Microwave

MT3H-0113LSM RF Mixer by Marki Microwave

Courtesy of everything RF – Read full article here: MT3H-0113LSM RF Mixer by Marki Microwave

The MT3H-0113LSM from Marki Microwave is a triple balanced passive diode mixer with an RF Frequency/LO Frequency from 1.5 to 13 GHz and IF Frequency from 0.8 to 8.5 GHz. The mixer has a high dynamic range and low insertion loss. It has excellent nonlinear performance in terms of IIP3, P1dB, and spurious performance with a flexible LO drive requirement from +7 dBm to +15 dBm. The MT3H-0113LSM is available in a 4×4 mm QFN package, or in an SMA connectorized evaluation fixture. This mixer is a superior alternative to Marki Microwave’s carrier and packaged T3 mixers.

Product Details

    • Part Number : MT3H-0113LSM
    • Manufacturer : Marki Microwave
    • Description : GaAs MMIC High Dynamic Range Mixer from 1.5 to 13 GHz

General Parameters

    • Type : Triple Balanced Mixer
    • RF Frequency : 1.5 to 13 GHz
    • LO Frequency : 1.5 to 13 GHz
    • IF Frequency : 0.8 to 8.5 GHz
    • Conversion Loss : 8 to 11.5 dB
    • LO Drive – Power : 7 to 15 dBm
    • IP3 : 22 dBm
    • Impedance : 50 Ohms
    • Package Type : Surface Mount
    • Package : QFN
    • Dimension : 4 x 4 mm
    • Operating Temperature : -55 to 100 Degree C
    • Storage Temperature : -65 to 125 Degree C
    • RoHS : Yes
Rogers Corporation RO3000® Laminates

Rogers Corporation RO3000® Laminates

Courtesy of Rogers Corporation RO3000® Laminates 

View more here:

RO3000® high frequency circuit materials are ceramic-filled PTFE composites intended for use in commercial microwave and RF applications. This family of products was designed to offer exceptional electrical and mechanical stability.

RO3000 series laminates are circuit materials with mechanical properties that are consistent regardless of the dielectric constant selected. This allows the designer to develop multi-layer board designs that use different dielectric constant materials for individual layers, without encountering warpage or reliability problems. The dielectric constant versus temperature of RO3000 series materials is very stable.


  • Lowest loss commercial laminates (RO3003)
  • Are available in a wide range of Dk (dielectric constant) (3.0 to 10.2)
  • Are available both with and without woven glass reinforcements
  • Low Z-axis CTE (24 ppm/C) provides plated through hole reliablity
  • Low TCDk for electrical stablity versus temperature (RO3003)

Typical Applications

  • Automotive radar applications
  • Global positioning satellite antennas
  • Cellular telecommunications systems – power amplifiers and antennas
  • Patch antenna for wireless communications
  • Direct broadcast satellites
  • RFID Tags
  • Surface mount RF components
  • E-Band point to point microwave links


RO3000® Laminates

RO3003™ Laminates

  • PTFE/ceramic laminates with exceptional electrical properties and mechanical stability
  • Dielectric constant 3.00(+/-0.04); dissipation factor 0.0013@010GHz
  • Available with Rolled Copper
RO3000® Laminates

RO3006™ and RO3010™ Laminates

  • Higher dielectric constant laminates for reduced circuit size
  • Dielectric constant of 6.15 +/-0.15 for RO3006 laminates and 10.2 +/- 0.30 for RO3010 laminates
RO3000® Laminates

RO3035™ Laminates

  • PTFE/ceramic laminates with exceptional electrical properties and mechanical stability
  • Dielectric constant 3.50 (+/-0.05); dissipation factor 0.0017 @10GHz
  • Available with Rolled Copper
RO3000® Laminates

RO3203™, RO3206™ and RO3210™ Laminates

  • Addition of woven glass reinforcement to increase laminate rigidity
  • Available in same range of dielectric constant options as RO3000® series laminates
  • RO3203™ Available with Rolled Copper
Qorvo QPD1025 :

Qorvo QPD1025 : 1,800 Watt GaN-on-SiC Transistor For Critical IFF and Avionics Applications

Courtesy of everything RF – Read article here : Qorvo QPD1025 : 1,800 Watt GaN-on-SiC Transistor For Critical IFF and Avionics Applications

Qorvo has introduced its highest power gallium nitride on silicon carbide (GaN-on-SiC) RF transistor that has an output power of 1.8 KW. The QPD1025 is a 65 volts GaN Transistor operates from 1.0 to 1.1 GHz and delivers outstanding signal integrity and extended reach essential for L-band avionics and Identification Friend or Foe (IFF) applications.

The QPD1025 is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from 1.0 to 1.1 GHz and supports both CW and pulsed operations. It has significantly better drain efficiency and beats LDMOS by nearly 15% in terms of efficiency, which is significant in IFF and avionics applications.

The device is available in an industry standard air cavity package and is ideally suited for IFF, avionics and test instrumentation. It is internally matched so it does not require an external matching network which saves considerable board space.

Qorvo offers the largest, most innovative GaN-on-SiC portfolio. The company’s products deliver high power density, reduced size, excellent gain, high reliability and process maturity, with volume production dating back to 2000.

Engineering samples of the QPD1025 are available now.

Nordic nRF52832 SoC

Bluetooth Low Energy wireless solution allows smartphone gaming device to pair with companion apps and other devices for multi-player action

Courtesy of Nordic Semiconductor

Nordic’s nRF52832 SoC supports Central and Peripheral Bluetooth LE roles so up to eight users can play Augmented Reality-based games concurrently on smartphones

Nordic Semiconductor today announces that Shenzhen Geekplay Technology Co. Ltd, a Guangdong, China-based developer of Augmented Reality (AR) tech-toys and gaming apps, has selected Nordic’s Bluetooth® Low Energy (Bluetooth LE) nRF52832 System-on-Chip (SoC) as the wireless connectivity solution for ‘Geek Unit’, its portable AR gaming device.

The Geek Unit hardware attaches to the back of the user’s compatible Bluetooth 4.0 (and later) iOS or Android smartphone and converts real-world scenery and objects into an exciting gaming arena through one of two partner apps, named ‘Geekplay’ and ‘Geek Unit’.

Enabled by the Nordic SoC’s support of both Central and Peripheral Bluetooth LE roles, each device establishes a low-latency link to the user’s smartphone—as well as up to seven other smartphone-attached Geek Unit devices at the same time—allowing multiplayer AR-based gaming in a diverse range of physical environments.

Users can launch either the Geekplay app for a large-scale game of AR ‘laser tag’ where tangible objects act as battle obstacles, or the Geek Unit app to access 360° scalable arena games developed by Apple ARKit, an advanced AR technology platform. The Geek Unit device is supplied with a built-in lithium battery that offers approximately 300 days of standby time and 15 hours of continuous operation thanks in part to the ultra low power (ULP) capabilities of the Nordic SoC.

Nordic’s nRF52832 multiprotocol SoC, a member of Nordic’s sixth generation of ULP wireless connectivity solutions, combines an 64MHz, 32-bit Arm® Cortex® M4F processor with a 2.4GHz multiprotocol radio (supporting Bluetooth 5, ANT™, and proprietary 2.4GHz RF software) featuring -96dB RX sensitivity, with 512kB Flash memory and 64kB RAM.

The SoC is supplied with Nordic’s S332 SoftDevice, a combination Bluetooth 5-certifed/ANT™ RF software protocol stack for building advanced Bluetooth LE and ANT applications. The S332 SoftDevice supports Central, Peripheral, Broadcaster and Observer Bluetooth LE roles, supports up to twenty connections, and enables concurrent role operation.

“By adopting Bluetooth LE wireless connectivity through the Nordic SoC, our products can set up high-speed personal arena networks for smooth communication and cable-free gaming among multiple players,” says Spencer Dai, Branding Director at Geekplay.

“Nordic has always offered us professional service and fast response times. The company is willing to help us improve our products, which is rare and extremely valuable for a startup like Geekplay.”

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GaN-on-SiC Transistor

Qorvo® Introduces Industry’s Most Powerful GaN-on-SiC Transistor

Courtesy of Qorvo : Read full article here: Qorvo® Introduces Industry’s Most Powerful GaN-on-SiC Transistor


GREENSBORO, NC – March 13, 2018 – Qorvo® (Nasdaq:QRVO), a leading provider of innovative RF solutions that connect the world, today introduced the world’s highest power gallium nitride on silicon carbide (GaN-on-SiC) RF transistor. Operating with 1.8KW at 65 volts, the QPD1025 delivers the outstanding signal integrity and extended reach essential for L-band avionics and Identification Friend or Foe (IFF) applications.

Asif Anwar, executive director of Strategy Analytics’ Strategic Technologies Practice, said, “Qorvo’s QPD1025 transistor represents a true game changer in this segment. It offers comparable pulsed power and duty cycle performance to silicon LDMOS and silicon bipolar devices, but with a marked improvement in efficiency. Qorvo further achieves this high power and efficiency without introducing exotic materials such as diamond into the process flow for thermal management, ensuring a solution that is cost effective.”

Roger Hall, general manager, Qorvo High Power Solutions, said, “This new high-power transistor will save customers time and money by eliminating the difficult exercise of combining amplifiers to create multi-kilowatt solutions. The QPD1025 has significantly better drain efficiency and beats LDMOS by nearly 15 percentage points of efficiency, which is significant in IFF and avionics applications.”

Qorvo offers the industry’s largest, most innovative GaN-on-SiC portfolio. The company’s products deliver high power density, reduced size, excellent gain, high reliability and process maturity, with volume production dating back to 2000. More information about the benefits of Qorvo’s GaN-on-SiC is available here, and in this video.

Engineering samples of the QPD1025 are available now.

QPD1025 1800 Watt, 65-Volt GaN RF Input-Matched Transistor
Frequency Range: 1.0 to 1.1 GHz
Linear Gain: 22.5 dB (@1.0 GHz Load Pull)
Typical PAE3dB: 77.2% (@1.0 GHz Load Pull)
CW and Pulse capable
Package: 4-lead NI-1230 (earless)

About Qorvo

Qorvo (NASDAQ:QRVO) makes a better world possible by providing innovative RF solutions at the center of connectivity. We combine product and technology leadership, systems-level expertise and global manufacturing scale to quickly solve our customers’ most complex technical challenges. Qorvo serves diverse high-growth segments of large global markets, including advanced wireless devices, wired and wireless networks and defense radar and communications. We also leverage our unique competitive strengths to advance 5G networks, cloud computing, the Internet of Things, and other emerging applications that expand the global framework interconnecting people, places and things. Visit to learn how Qorvo connects the world.

Qorvo is a registered trademark of Qorvo, Inc. in the U.S. and in other countries.

Investor Relations Contact:
Doug DeLieto
VP, Investor Relations
Media Contact:
Katie Caballero
Marketing Communications Manager
Qorvo Infrastructure and Defense Products
+1 972-994-8546

This press release includes “forward-looking statements” within the meaning of the safe harbor provisions of the Private Securities Litigation Reform Act of 1995. These forward-looking statements include, but are not limited to, statements about our plans, objectives, representations and contentions and are not historical facts and typically are identified by use of terms such as “may,” “will,” “should,” “could,” “expect,” “plan,” “anticipate,” “believe,” “estimate,” “predict,” “potential,” “continue” and similar words, although some forward-looking statements are expressed differently. You should be aware that the forward-looking statements included herein represent management’s current judgment and expectations, but our actual results, events and performance could differ materially from those expressed or implied by forward-looking statements. We do not intend to update any of these forward-looking statements or publicly announce the results of any revisions to these forward-looking statements, other than as is required under the federal securities laws. Qorvo’s business is subject to numerous risks and uncertainties, including variability in operating results, the inability of certain of our customers or suppliers to access their traditional sources of credit, our industry’s rapidly changing technology, our dependence on a few large customers for a substantial portion of our revenue, a loss of revenue if contracts with the U.S. government or defense and aerospace contractors are canceled or delayed, our ability to implement innovative technologies, our ability to bring new products to market and achieve design wins, the efficient and successful operation of our wafer fabrication facilities, assembly facilities and test and tape and reel facilities, our ability to adjust production capacity in a timely fashion in response to changes in demand for our products, variability in manufacturing yields, industry overcapacity and current macroeconomic conditions, inaccurate product forecasts and corresponding inventory and manufacturing costs, dependence on third parties and our ability to manage platform providers and customer relationships, our dependence on international sales and operations, our ability to attract and retain skilled personnel and develop leaders, the possibility that future acquisitions may dilute our shareholders’ ownership and cause us to incur debt and assume contingent liabilities, fluctuations in the price of our common stock, additional claims of infringement on our intellectual property portfolio, lawsuits and claims relating to our products, security breaches and other similar disruptions compromising our information and exposing us to liability, and the impact of stringent environmental regulations. These and other risks and uncertainties, which are described in more detail in Qorvo’s most recent Annual Report on Form 10-K and in other reports and statements filed with the Securities and Exchange Commission, could cause actual results and developments to be materially different from those expressed or implied by any of these forward-looking statements.