Newest addition to growing GaN family tailored for wideband defense and commercial radar, communications and avionics
GREENSBORO, NC and HILLSBORO, OR – May 20, 2016 – Qorvo® (Nasdaq: QRVO), a leading provider of core technologies and RF solutions for mobile, infrastructure and defense applications, today introduced six new 50 Volt gallium nitride (GaN) transistors designed to optimize power performance for commercial and defense radar, communications systems and avionics.
Roger Hall, Qorvo’s general manager of Defense & Aerospace Products said, “This new family of 50V GaN transistors improves system performance by offering more power gain and power-added efficiency. Qorvo can better enable defense equipment such as phased array radars, to deliver higher performance while managing size, cost and power.”
Qorvo’s new family of 50V GaN transistors offers significant operational and system cost savings from greater system-level efficiency. The small device size and higher impedance input/output leads help optimize board designs for radar, communications, avionics, wideband amplifiers and test instrumentation.
The QPD1009 and QPD1010 are now available in low-cost 3x3mm plastic QFN packages, while the QPD1008(L) and QPD1015(L) are now available in industry standard, thermally enhanced NI-360 air cavity ceramic packages, in eared and earless versions. This family of GaN transistors operates from 10W up to 125W power levels.
|Product||Psat (W)||Freq (GHz)||Output Power (P3dB)||PAE (%)||SS Gain (dB)||Packaging (mm)|
Qorvo is the leading GaN RF supplier for the defense and cable industries*. Since 1999, Qorvo has been driving GaN research and innovation, offering proven GaN circuit reliability and compact, highly efficient products. Qorvo is a Defense Manufacturing Electronics Agency accredited 1A Trusted Source, having completed the Defense Production Act Title III GaN on SiC program in 2014. The Company remains the only GaN supplier to have achieved Manufacturing Readiness Level (MRL) 9. Qorvo drives the innovation of GaN products for next-generation systems – from DC through Ka-band – that successfully transition from the factory to the field with robust performance, low maintenance and long operational lifetimes.
Qorvo’s GaN products will be showcased at Booth 839 at the IEEE International Microwave Symposium (IMS), May 22-27 in San Francisco, Calif. Visit us at IMS or join the conversation online using the hashtags #IMS2016 and #QorvoIMS.
Qorvo (NASDAQ:QRVO) is a leading provider of core technologies and RF solutions for mobile, infrastructure and aerospace/defense applications. Qorvo was formed following the merger of RFMD and TriQuint, and has more than 7,000 global employees dedicated to delivering solutions for everything that connects the world. Qorvo has the industry’s broadest portfolio of products and core technologies; world-class ISO9001-, ISO 14001- and ISO/TS 16949-certified manufacturing facilities; and is a DoD-accredited ‘Trusted Source’ (Category 1A) for GaAs, GaN and BAW products and services. For the industry’s leading core RF solutions, visit www.qorvo.com.