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CMD257C4 RF Mixer by Custom MMIC

Courtesy of everything RF

The CMD257C4 is a surface mount compact I/Q mixer with a RF/LO frequency from 6 to 10 GHz and IF Frequency from DC to 3.5 GHz. It has a low conversion loss of 5.5 dB, high LO to RF isolation of 40 dB, and an input IP3 of 25 dBm across the bandwidth. The CMD257C4 can be configured as an image reject mixer or single sideband upconvertor by utilizing two double balanced mixer cells and a 90 degree hybrid. It is available in a 4 x 4 mm ceramic QFN surface mount package and provides an image rejection of 30 dB. An external IF hybrid is needed to complete the image rejection.

  • Manufacturer: Custom MMIC
  • Description: 6 to 10 GHz High IP3 I/Q Mixer
  • RF Frequency: 6 to 10 GHz
  • LO Frequency: 6 to 10 GHz
  • IF Frequency: DC to 3.5 GHz
  • Image Rejection: 22 to 31 dB
  • Conversion Loss: 5.5 to 9 dB
  • LO Drive – Power: 27 dBm
  • P1dB: 15 dBm
  • IP3: 24 dBm
  • LO/RF Isolation: 34 to 45 dB
  • LO/IF Isolation: 13 to 18 dB
  • Package Type: Surface Mount
  • Dimension: 4 x 4 mm
  • Operating Temperature: -40 to 85 Degree C
  • Storage Temperature: -55 to 150 Degree C
  • RoHS: Yes

CMD258C4 RF Mixer by Custom MMIC

Courtesy of everything RF

The CMD258C4 is a surface mount compact I/Q mixer with a RF/LO frequency from 7.5 to 13 GHz and IF Frequency from DC to 3.5 GHz. It has a low conversion loss of 5.5 dB, high LO to RF isolation of 38 dB, and an input IP3 of 25 dBm across the bandwidth. The CMD258C4 can be configured as an image reject mixer or single sideband upconvertor by utilizing two double balanced mixer cells and a 90 degree hybrid. An external IF hybrid is needed to complete the image rejection.

Product Specifications

  • Manufacturer: Custom MMIC
  • Description: 7.5 to 13 GHz High IP3 SMT I/Q Mixer
  • Type: I/Q Mixer
  • RF Frequency: 7.5 to 13 GHz
  • LO Frequency: 7.5 to 13 GHz
  • IF Frequency: DC to 3.5 GHz
  • Image Rejection: 23 to 30 dB
  • Conversion Loss: 5.5 to 10 dB
  • LO Drive – Power: 27 dBm
  • P1dB: 16 dBm
  • IP3: 25 dBm
  • LO/RF Isolation: 34 to 42 dB
  • LO/IF Isolation: 14 to 20 dB
  • Package Type: Surface Mount
  • Dimension: 4×4 mm
  • Operating Temperature: -40 to 85 Degrees C
  • Storage Temperature: -55 to 150 Degrees C

Tech Brief Aids Receiver Designers in Selecting Optimal Low Noise Amplifier MMICs

Courtesy of Custom MMIC

Custom MMIC is proud to announce a new technical brief describes additional selection criteria commonly overlooked during the initial evaluation phase of an LNA.

Low Noise Amplifier (LNA) MMICs are a critical component in virtually all radar, wireless communication and instrumentation systems. There are a wide range of options and tradeoffs an engineer must consider when picking an LNA MMIC for a particular system design. The noise figure is often the feature of primary focus, as noise figure defines the sensitivity of the receiver — a critical system requirement. After noise figure, other project specific needs related to performance and size, weight, power and cost (SWaP-C) are then considered. Often these features are not heavily weighted, but they can make a big difference in advanced microwave applications.

Keeping these additional parameters in mind may help an engineer save time during the design cycle, save money during assembly, and enhance a product’s competitive advantage, leading to valuable contract wins.

Download and read the tech brief, “5 Key LNA MMIC Factors That Can Make or Break a Receiver Design.”

Understanding the Phenomenon of High-Power Pulse Recovery in GaN LNAs

Courtesy of Custom MMIC

Custom MMIC is proud to announce a new technical brief discussing the phenomenon of high-power pulse recovery in GaN LNAs. 

The Gallium Nitride (GaN) high electron mobility transistor (HEMT) is well known for its use in microwave and millimeter wave power amplifiers due to its high breakdown voltage and ability to handle high RF power. Recently, GaN technology has also been used to create low noise amplifiers (LNAs) in the microwave region, as the noise properties of GaN are similar to other semiconductor materials, most notably Gallium Arsenide (GaAs).

In many microwave systems, LNAs are subject to unwanted high input power levels such as jamming signals. One of the features of LNAs made from GaN is the ability to withstand these input power levels without the need for a limiter, due to the inherent robustness of the device. Indeed, this is one reason GaN LNAs are supplanting their GaAs counterparts since GaAs LNAs typically require a front-end limiter, which adds to the cost and degrades the performance of the LNA.

Download the tech brief to learn more, Understanding the Phenomenon of High-Power Pulse Recovery in GaN LNAs.”

Versatile GaAs MMIC Mixers Help Increase Dynamic Range of Radar and RF Communication Applications

Courtesy of Custom MMIC

Custom MMIC has announced three new GaAs MMIC mixers for C-band, X-band, K-band, and Ka-band applications. The CMD251C3 fundamental mixer, CMD252C4 I/Q mixer, and CMD180 fundamental mixer deliver best-in-class isolation and conversion loss performance while offering low input power requirements. These new MMIC mixers help increase dynamic range while reducing LO power and subsequent filtering requirements. They are ideal for high-performance commercial, military, aerospace, and satcom applications.

The CMD251C3 is a general purpose, fundamental double-balanced MMIC mixer in a 3×3 mm leadless surface mount package that can be used for up- and down-converting applications between 4 and 8.5 GHz (C-band). This fundamental mixer exhibits high LO to RF and LO to IF isolation of 36 dB due to optimized balun structures, and can operate with an LO drive level as low as +15 dBm. This GaAs mixer also demonstrates a wide IF bandwidth of DC to 2.2 GHz and a very low conversion loss of only 7 dB.

The CMD252C4 is a 4 GHz to 8 GHz (C-band) compact I/Q MMIC mixer in a 4×4 leadless surface mount package. This fundamental mixer is comprised of two double-balanced mixer cells and a 90 degree hybrid. An external IF hybrid is needed to complete the image rejection of 30 dB, but this combination is a much smaller alternative to higher cost hybrid image reject mixers and single-sideband upconverter assemblies. The CMD252C4 also features a wide IF bandwidth of DC to 2.4 GHz with a low IRM conversion loss of only 6.5 dB.

The CMD180 is a general purpose, fundamental double-balanced MMIC mixer available in a small die size. This GaAs MMIC can be used for wideband up- and down-converting applications between 20 and 32 GHz (X-band, K-band, Ka-band). It features very high isolation to both the RF and IF ports of 36 dB, also due to optimized balun structures, and can operate with an LO drive level as low as +9 dBm. The CMD180 provides a wide IF bandwidth between DC and 10 GHz, and presents a low conversion loss of only 7 dB.

Evaluation boards are also available.

CMD251C3

Courtesy of www.everythingrf.com

RF Mixer by Custom MMIC

The CMD251C3 from Custom MMIC is a general purpose double balanced mixer with a RF/LO frequency from 4 to 8.5 GHz. It has a low conversion loss of 7 dB, high LO to RF isolation of 45 dB, and a high input P1dB of 21 dBm across the bandwidth. The CMD251C3 can be used in both up/down converting systems and can be configured as an image reject mixer or single sideband modulator with external hybrids and power splitters. It is available in a 3 x 3 mm ceramic QFN surface mount package.

Product Specifications

  • Manufacturer: Custom MMIC
  • Description: Double Balanced Mixer from 4 to 8.5 GHz
  • RF Frequency: 4 to 8.5 GHz
  • LO Frequency: 4 to 8.5 GHz
  • IF Frequency: DC to 2.2 GHz
  • Conversion Loss: 7 to 10 dB
  • Conversion Gain: -7 dB
  • Noise Figure: 7 to 10 dB
  • LO Drive – Power: 25 dBm
  • P1dB: 16 to 17 dBm
  • LO/RF Isolation: 45 dB
  • LO/IF Isolation: 36 dB
  • Package Type: Surface Mount
  • Package: 3 x 3 mm ceramic QFN
  • Dimension: 3 x 3 mm
  • Operating Temperature: -40 to 85 Degree C
  • Storage Temperature: -55 to 150 Degree C
  • RoHS: Yes

 

Positive Bias Tech Brief – Eliminating Complex Bias Sequencers and Negative Voltage Supply

Courtesy of Custom MMIC

Positive Bias Tech Brief - Eliminating Complex Bias Sequencers and Negative Voltage Supply

Custom MMIC is proud to announce a new technical brief illuminating our progress in eliminating complex bias sequencers and negative voltage supply.

Experts at Custom MMIC have been exploring the use of enhancement mode pseudomorphic high-electron-mobility-transistors (E-pHEMTs) in monolithic microwave integrated circuits (MMICs). This is a promising technique, for it may directly address a well-known design challenge. Specifically, that of sequencing in amplifier biasing.

The savings generated by removing the sequencer can be enormous. The use of E-pHEMT devices by designers of power amplifiers (PAs) and low noise amplifiers (LNAs) is in its infancy, as such devices have only recently been made available from a number of semiconductor manufacturers. However, Custom MMIC has been a pioneer in this area and currently offers dozens of standard, off-the-shelf PA and LNA components built with E-PHEMT technology. Not only can E-pHEMT amplifiers reduce cost and complexity, they can also improve performance. By definition, this is a win-win situation.

Download and read the tech brief, “Throw out complex bias sequencers along with the negative voltage supply.

Custom MMIC Included in Latest Market Report on LNAs as a Leading Innovator

Courtesy of Custom MMIC

According to the new market research report Low Noise Amplifier (LNA) Market by Frequency (<6 GHz, 6-60 GHz, and >60 GHz), Material (Silicon, Silicon Germanium, Gallium Arsenide), Vertical (Consumer, Telecom, Military, Industrial, Automotive and Medical), and Geography – Global Forecast to 2023″, published by Markets and Markets (TM), the market is expected to grow from USD 1.17 Billion in 2016 to USD 3.00 Billion by 2023, at a CAGR of 13.8% between 2017 and 2023.

According to the report: “The major factors driving the growth of this market include the huge demand from the smartphone market, growing bandwidth demand, and increasing usage of long-term evolution (LTE) technology. The consumer electronics vertical is expected to hold the largest share between 2017 and 2023. The growth is attributed to the growing adoption of consumer electronics devices such as wearable devices; smartphones, tablets, and laptops; portable navigation devices; portable media players; digital cameras; and gaming consoles; as well as increasing number of e-readers. The LNA market for silicon germanium is expected to grow at the highest CAGR…

Asia Pacific (APAC) held the largest share of the market in 2016 and is expected to dominate the LNA market with the largest share between 2017 and 2023. The growth in the region is attributed to significantly high rate of adoption of smartphones; dramatic shift toward higher speed mobile technologies from 3G to 4G; higher increasing range of mobile services consumed, including video, social media, e-commerce, and financial services; and high military expenditures by countries such as China, India, Japan, and South Korea.

The major players of the LNA market are NXP Semiconductors N.V. (Netherlands), Analog Devices, Inc. (US), Infineon Technologies AG (Germany), L3 Narda-MITEQ (US), Qorvo, Inc. (US), Skyworks Solutions, Inc. (US), ON Semiconductor Corp. (US), Panasonic Corp. (Japan), Texas Instruments, Inc. (US), and Teledyne Microwave Solutions (US). The key innovators of the market are Custom MMIC (US), MACOM Technology Solutions Holdings, Inc. (US), SAGE Millimeter, Inc. (US), WanTcom Inc. (US), and DBWave Technologies Co., Ltd. (China). “

The report goes on to suggest that SiGe LNAs deliver better performance “in the low-power, high-frequency applications than those based on other materials such as silicon and gallium arsenide…” And that “Silicon germanium LNAs provide better linear performance and enhanced power efficiency.” To which we would argue that the latest in GaN and GaAs devices in our portfolio of LNAs might prove otherwise.

Please note: Custom MMIC is a privately held corporation.

Ultrawideband 2 GHz to 22 GHz Distributed Low Noise Amplifier Now Offered in Plastic 4×4 QFN package

Courtesy of Custom MMIC

Custom MMIC, a leading developer of performance driven monolithic microwave integrated circuits (MMICs), announces the CMD241P4, a packaged version of its popular CMD241 ultra-wideband GaAs MMIC distributed low noise amplifier. The wideband operation, low noise figure, low current consumption, excellent return loss, and compact size of this distributed amplifier device make it ideal in use in L-, S-, C-, X-, Ku-, and K-band wideband radar, broadband microwave/millimeter wave communications, SATCOM, and test and measurement instrumentation applications.

The CMD241P4 exhibits gain greater than 13 dB with a low noise figure of 2.3 dB. Both the gain and noise figure of this distributed amplifier are both extremely stable over temperature, from -55 °C to +85 °C. The CMD241P4 demonstrates a 1 dB compression point beyond +21 dBm at 11 GHz and an output IP3 of +28 dBm, operating off a positive 3 to 8 volt supply, with an extremely low current draw of only 74 mA. The input return loss is typically 13 dB, and output return loss of 15 dB.

The distributed amplifier comes in a Pb-free RoHs compliant 4×4 QFN plastic package. Also incorporated into the design of this MMIC is a 50 Ohm matched impedance at the input and output ports, which removes the need for both external DC blocks and RF matching.

Learn more about the CMD241P4 ultra-wideband distributed low noise amplifier.

www.custommmic.com

New MMIC Broadband Passive Frequency Doubler from 7 GHz to 11 GHz Offers Excellent Fundamental Isolation

Courtesy of Custom MMIC

Custom MMIC announces a new edition to their growing line of high performance MMIC doublers, the CMD226N3 broadband frequency doubler. The doubler covers an input frequency of 7 GHz to 11 GHz input frequency (C-,X, input ;Ku-, and K-band output). This doubler’s low conversion loss and excellent Fo isolation make it ideal for use in military radar, SMDS, SATCOM, VSAT, and LO chains for point-to-point microwave/millimeter-wave radio in cellular backhaul applications.

The GaAs MMIC CMD226N3 is a x2 passive frequency multiplier that offers broadband performance and is housed in a QFN-style package. With a drive level of +15 dBm, this frequency doubler offers 9.0 dBm of conversion loss at 18 GHz and Fo Isolation in reference to an input level of 44 dB. The 3Fo and 4Fo isolation are at least 48 dBc and 50 dBc, respectively.

Extremely temperature stable, the conversion gain varies less than 2 dB from nominal across the entire frequency band of operation, and is also very stable under varying drive conditions. The CMD226N3’s passive design exhibits excellent phase noise performance, without the need for biasing circuitry. It also incorporates a 50 ohm matched design on chip–removing the necessity to RF port match this device.

Download a full datasheet of the CMD226N3 Frequency Doubler to learn more.