TGF2929-HM from Qorvo

Courtesy of everything RF

The TGF2929-HM from Qorvo is a 100 W (P3dB) discrete GaN on SiC HEMT that operates from DC to 3.5 GHz. It provides a linear gain of 17.4 dB and requires a 28 V DC Supply. The device has been developed on Qorvo proven QGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization lowers system costs in terms of fewer amplifier line-ups and lower thermal management costs. This GaN on SiC HEMT is available in a hermetic flanged package. It can be used in a wide range of applications including Space Radars, Satcom, Military Radars and Civillian Radars, Jammers, test instrumentation and radio communications.

 Product Specifications

  • Manufacturer: Qorvo
  • Description: 100 Watt GaN on SiC HEMT from DC to 3.5 GHz
  • Transistor Type: HEMT
  • Technology: GaN on SiC
  • Application Industry: Wireless Infrastructure, Radar, Aerospace & Defence, Test & Measurement
  • Application: Military, Communication, Jammers, Test Instrumentation
  • CW/Pulse: Pulse, CW
  • Frequency: DC to 3.5 GHz
  • Power: 50 dBm
  • Power(W): 100 W
  • Saturated Power: 51.2 dBm
  • Pulsed Width: 100 us
  • Duty_Cycle: 0.2
  • Gain: 17.4 dB
  • Supply Voltage: 12 to 60 V
  • Voltage – Gate-Source (Vgs): -2.8 V
  • Quiescent Drain Current: 260 mA
  • Package Type: Flange
  • RoHS: Yes

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