TSY-83LN+RF Amplifier by Mini Circuits

TSY-83LN+ RF Amplifier by Mini Circuits

TSY-83LN+ RF Amplifier by Mini Circuits

The TSY-83LN+ from Mini-Circuits is a GaAs pHEMT Low Noise Amplifier MMIC that operates from 0.4 to 8 GHz. It provides a gain of up to 23 dB with a noise figure of less than 2.5 dB and has a P1dB output power of up to +22.9 dBm. This LNA MMIC is bypass mode capable and suitable for sensitive, high dynamic range receiver applications where a gain stage may need to be quickly bypassed in the presence of high-power RF signals. It requires a DC supply of +6 V or +5 V and consumes less than 104 mA of current. This amplifier is available in a 12-lead QFN package that measures 3.00 x 3.00 x 0.89 mm and is ideal for radar, EW & ECM defense systems, 5G Sub-6 GHz, MIMO wireless infrastructure systems, and test and measurement equipment applications.

Product Details

  • Part Number: TSY-83LN+
  • Manufacturer: Mini Circuits
  • Description: GaAs pHEMT Low Noise Amplifier MMIC from 0.4 to 8 GHz

General Parameters

  • Type: Low Noise Amplifier
  • Configuration: IC/MMIC/SMT
  • Application: Electronic Countermeasure (ECM), Electronic Warfare, Radar
  • Standards Supported: 5G
  • Industry Application: Test & Measurement, Military, Cellular, Wireless Infrastructure
  • Frequency: 400 MHz to 8 GHz
  • Gain: 18.5 to 23 dB
  • Noise Figure; 1.5 to 2.5 dB
  • Grade: Commercial, Military
  • IP3: 33.6 dBm
  • Impedance: 50 Ohms
  • Pulsed/CW: CW
  • Supply Voltage: 6 V
  • Current Consumption: 4 to 104 mA
  • Technology: GaAs pHEMT
  • Package Type: Surface Mount
  • Package: 12-Lead QFN-Style
  • Dimensions: 3 x 3 mm
  • Operating Temperature: -40 to 85 Degree C
  • Storage Temperature: -65 to 150 Degree C
  • RoHS: Yes

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