SGNL130M1R by Sumitomo Electric Device Innovations

SGNL130M1R by Sumitomo Electric Device Innovations

SGNL130M1H by Sumitomo Electric Device Innovations

Sumitomo Electric SGNL130M1R

Part NumberSGNL130M1R
ClassGaN Product > GaN HEMTs for General Purpose
Outline / Package Code
M1R
FunctionDC – 3GHz High Power GaN-HEMT
Features
  • High Power GaN HEMT for DC to 3GHz
  • High Power : 150W @ 3GHz
  • High Efficiency: 57% @ 3GHz
  • CW Operable
  • Easy of Matching: Input Pre-matched for 3GHz
  • Small Footprint Flange-mount Package
DescriptionSumitomo Electric’s GaN-HEMT SGNL130M1R offers high power, high efficiency, ease of matching and greater consistency for DC to 3GHz high power applications with 50V operation.
Datasheet(712KB PDF)
Frequency (GHz)DC-3.0
VDS (V)50
Spec. Frequency3
Pout (dBm)51.9
Gp (dB)15.9
ηD @Psat (%)56.5
ConditionsPulse width: 200µsec, Duty 10%
NoteTc(op)=+25°C

Get in touch for orders or any queries: sales@rfdesign.co.za / +27 21 555 8400

Courtesy of Sumitomo Electric Device Innovations

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