SGCB056M1H-R by Sumitomo Electric Device Innovations

SGCB056M1H-R by Sumitomo Electric Device Innovations

SGCB056M1H-R by Sumitomo Electric Device Innovations

SGCB056M1H-R Dimension

Product Specifications

Part NumberSGCB056M1H-R
ClassGaN Product > GaN HEMTs for Radar
Outline / Package CodeM1H
FunctionDC – 3.5GHz High Power GaN-HEMT
Features
  • High Power GaN HEMT for DC to 3.5GHz
  • High Power: 67W @ 3.5GHz
  • High Efficiency: 60% @ 3.5GHz
  • Broadband Operation
  • Small Flangeless Package
DescriptionSumitomo Electric’s GaN-HEMT SGCB056M1H-R offers high power, high efficiency, ease of matching and greater consistency for DC to 3.5GHz Radar applications with 50V operation. SGCB056M1H-R is suitable for broadband applications.
Datasheet
PDF 1652KB

Electrical Characteristics

Frequency (GHz)DC-3.5
Pout (dBm)48.3
Power Gain (dB)12.3
Efficiency (%)60
VDS (V)50
IDS(DC) (A)0.13
Rth (°C/W)2.2
ConditionPulse width: 200µsec, Duty 10%
NoteTc(op)=+25°C

Get in touch for orders or any queries: sales@rfdesign.co.za / +27 21 555 8400

Courtesy of Sumitomo Electric Device Innovations

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