CMX90G701 RF Amplifier by CML Microcircuits

CMX90G701 RF Amplifier by CML Microcircuits

CMX90G701 RF Amplifier by CML Microcircuits

The CMX90G701 from CML Microcircuits is a Gain Block that operates from 6 to 18 GHz. It provides a small signal gain of 10.2 dB with a noise figure of 2.6 dB (@12 GHz) and has a gain slope of +1 dB. This gain block has an output P1dB of 10 dBm and provides a reverse isolation of more than 16 dB. It is fabricated using a GaAs pHEMT process and provides high linearity, low noise, and low DC power consumption. The positive gain slope of this block eliminates the need for equalization and compensates for increasing system losses with frequency. It is highly integrated to minimize the external component count and board area.

The CMX90G701 requires a single positive DC supply from 2 to 5 V and consumes less than 22 mA of current. It features an active bias circuit with enable function that allows the device to operate over a wide supply voltage and temperature range. This gain block includes on-chip matched ports (50 ohms) with an output DC-blocking capacitor. It is available in a VQFN 16-pin package that measures 3 x 3 mm and is ideal for fixed wireless access (FWA), SATCOM (Ku-band), X-band, 5G infrastructure, and backhaul applications.

Product Details

  • Part Number: CMX90G701
  • Manufacturer: CML Microcircuits
  • Description: Surface-Mount Positive-Slope Gain Block from 6 to 18 GHz

General Parameters

  • Type: Gain Block, Slope Amplifier
  • Configuration: IC/MMIC/SMT
  • Application: Backhaul
  • Display Application: PA Modules, Eliminate passive equaliser
  • Standards Supported: 5G, Ku Band, X Band
  • Industry Application: Wireless Infrastructure, SATCOM, Cellular
  • Frequency: 6 to 18 GHz
  • Small Signal Gain: 9.4 to 10.4 dB
  • Noise Figure: 2.6 to 3 dB
  • P1dB: 10 dBm
  • P1dB: 0.01 W
  • Grade: Commercial, Space
  • IP3: 19 dBm
  • IP3: 0.079 W
  • Input Power: 12 dBm
  • Input Power: 0.0158 W
  • Impedance: 50 Ohms
  • Reverse Isolation: 16 dB
  • Return Loss: 10 dB
  • Supply Voltage: 2 to 5 V
  • Current Consumption: 22 mA
  • Quiscent Current: 15 uA
  • Transistor Technology: GaAs pHEMT
  • Package Type: Surface Mount
  • Package: VQFN-16 Package
  • Dimensions: 3 x 3 x 0.9 mm
  • Operating Temperature: -40 to 105 Degree C
  • Storage Temperature: -40 to 125 Degree C
  • RoHS: Yes
  • Note: Positive gain-slope: +1 dB ; Turn-On Time: 0.6 µs ; Turn-Off Time: 0.9 µs

Courtesy of everything RF

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