Watech Electronics HRN160S065

RugSiC (Rugged-SiC) is a high-robustness silicon carbide device featuring exceptional reliability and GaN-comparable high-frequency performance. It is the first new-concept semiconductor device independently invented in China with fully owned IP since the transistor’s birth in 1947, and is expected to serve as a key component across global consumer and industrial applications.

Features:

– Superior Performance: LoongSpeedz RugSiC is an enhancement-mode normally-off device with ≥20% lower Rsp and 15% smaller die than leading competitors, offering stronger tolerance to abnormal conditions.

– High Short-Circuit Robustness: ~70% lower high-temperature saturation current enables >10µs short-circuit capability (tested), simplifying automotive protection circuits and improving safety margin.

– Excellent Time-Domain Consistency: table channel performance with no threshold drift ensures synchronized switching in high-frequency multi-device setups.

– Long Device Lifetime: No gate-oxide breakdown issues provide longer lifetime and lower O&M costs in new-energy systems.

– Proven Reliability: RugSiC has passed all JEDEC reliability tests.

Advantages:

– Normally-off SiC JFET
– Without gate oxide, eliminating associated reliability concerns
– 4–5x higher short-circuit ruggedness than SiC VDMOS
– Extremely low switching losses

– Switching performance comparable to power GaN

Get in touch for orders or any queries: sales@rfdesign.co.za / +27 21 555 8400

Courtesy of Watech Electronics (WATECH)