New from Watech: the H1D2122M15P GaN RF Power Transistor

We are pleased to introduce the Watech H1D2122M15P, a new GaN discrete RF power transistor from Watech’s GaN Discrete range. Built on a 3rd-generation compound semiconductor process, it combines high gain and high efficiency across 2.1 to 2.2 GHz, and it targets SATCOM power amplifier and payload designs.

Key specifications

Why it stands out

• High gain: 30.8 dB of gain means fewer driver stages, which simplifies the RF line-up.
• High efficiency: 51.4% at 32 dBm average output power reduces DC consumption and thermal load, which matters in space-constrained and power-limited systems.
• Compact package: the LGA 7×7 footprint saves board space in dense PA and payload designs.
• GaN performance: the process delivers efficiency and wide operating bandwidth, as across the rest of the GaN Discrete family, which spans peak power from 50W to 800W and frequencies up to 6GHz.

Target applications

• SATCOM power amplifiers
• Satellite payload

About Watech Electronics

Founded in 2010, Watech develops RF power semiconductors and PA products across LDMOS and GaN technologies, alongside power devices, analog ICs and MCUs.

Available in South Africa

We are Watech’s distributor in South Africa and can supply the H1D2122M15P with local technical support. Request a quote, samples or the datasheet, or talk to our team about your next SATCOM design.

Get in touch for orders or any queries: sales@rfdesign.co.za / +27 21 555 8400

Courtesy of Watech Electronics (WATECH)