CMX994EF Front End Module by CML Microcircuits

CMX90A002 RF Amplifier by CML Microcircuits

CMX90A002 RF Amplifier by CML Microcircuits

The CMX90A002 from CML Micro is a Dual-Stage GaAs Power Amplifier (PA) MMIC that operates from 860 to 960 MHz. It is designed for ISM band applications where RF performance, board space, and power architecture are important design considerations. This PA is manufactured using advanced GaAs HBT technology, providing high efficiency and gain in a compact form factor, and can be used as a booster in low-voltage systems or a final-stage PA in high-voltage systems. This amplifier delivers a saturated output power of +32.5 dBm (~1.8 W) with a small-signal gain of 30 dB and a power-added efficiency (PAE) of 49%. 

The CMX90A002 also incorporates on-chip impedance matching, active bias circuitry, and a DC-blocking capacitor, minimizing the external component count and board area. This power amplifier requires a 1.9 to 4.5 V DC supply and draws 75 mA of current. Its wide supply voltage range makes it suitable for systems powered by a supercapacitor backup or a single-cell Li-ion battery. This amplifier is available in a VQFN-16 package measuring 3 × 3 mm. It is ideal for automatic meter-reading equipment, smart meters, wireless modules, 868/915 MHz ISM applications, Li-ion battery-powered devices, and IoT applications.

Product Details

  • Part Number: CMX90A002
  • Manufacturer: CML Microcircuits
  • Description: Dual-Stage GaAs Power Amplifier MMIC from 860 to 960 MHz

 

General Parameters

  • Type: Power Amplifier
  • Configuration: IC/MMIC/SMT
  • Display Application: Automatic Meter Readers (AMR), Smart Meters, Wireless Modules, Li-Ion Battery Powered Systems
  • Industry Application: IoT
  • Frequency: 860 to 960 MHz
  • Small Signal Gain: 30 to 31 dB
  • Grade: Commercial
  • Saturated Power: 0.79 to 2 W
  • PAE: 49 %
  • Impedance: 50 Ohms
  • Pulsed/CW: CW
  • Input Return Loss: 12 dB
  • Output Return Loss: 7 dB
  • Supply Voltage: 1.9 to 4.5 V
  • Current Consumption: 0.7 A
  • Quiscent Current: 75 mA
  • Transistor Technology: GaAs HBT
  • Package Type: Surface Mount
  • Package: VQFN-16
  • Dimensions: 3 x 3 mm
  • Operating Temperature: -40 to 85 Degree C
  • Storage Temperature: -40 to 125 Degree C
  • RoHS: Yes

 

Get in touch for orders or any queries: sales@rfdesign.co.za / +27 21 555 8400

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