Watech Electronics expands its Civilian C-UAS (Counter-Unmanned Aerial Systems) PA Product Matrix with the release of the HTN3D30S060HB, a high-performance discrete Gallium Nitride (GaN) power amplifier transistor. Operating across a wide frequency range of 400 to 3000 MHz (0.4 – 3.0 GHz), this device combines high power density, exceptional thermal stability, and robust performance in a compact footprint.
Part of the STREAM-PA™ Series, the HTN3D30S060HB delivers up to 60W saturated output power and reaches 71% typical efficiency, offering an optimized solution for modern anti-drone and wideband RF applications.
Technical Specifications at a Glance
Parameter | Specification |
Model | HTN3D30S060HB |
Series | STREAM-PA™ Series |
Semiconductor Technology | Gallium Nitride (GaN) Process |
Saturated Output Power () | 60W |
Operating Frequency Range | 400 – 3000 MHz (0.4 – 3.0 GHz) |
Typical Efficiency | 71% (CW @ 1900 MHz, 28V) |
Typical Gain | 19.4 dB |
Working Drain Voltage | 28 V |
Package Type | ACC0906B – 2S (Low Thermal Resistance Packaging) |
Detailed Application Performance
The HTN3D30S060HB features strong efficiency and power output across major operational bands at 28V CW:
Key Applications
Designed for high reliability under demanding signal environments, the HTN3D30S060HB is suited for:
Get in touch for orders or any queries: sales@rfdesign.co.za / +27 21 555 8400
Courtesy of Watech Electronics (WATECH)
