Elevating High-Power RF Systems: Introducing ATEK MIDAS’ New GaN on SiC SPDT MMIC Switches

As modern RF and microwave architectures push further into higher frequency bands and demanding power levels, traditional semiconductor technologies frequently hit their limits. To address these challenges, ATEK MIDAS has expanded its high-performance semiconductor portfolio with a powerful new family of Gallium Nitride on Silicon Carbide (GaN on SiC) MMIC switches: the ATEK273AN4 and ATEK274N4.

Designed specifically to tackle rigorous power, efficiency, and robustness requirements, these single-pole, double-throw (SPDT) power switches showcase the true potential of GaN technology in advanced RF engineering.

Key Product Highlights

1. ATEK273AN4: Wideband Versatility with High Power Handling

• Frequency Range: DC to 18 GHz
• Power Handling ( ): 15W
• Insertion Loss: 1.2 dB
• Isolation: 40 dB
• Linearity:   IIP3
• Control/Bias:   to 
• Package: Compact   QFN
• Link: Explore ATEK273AN4

2. ATEK274N4: High-Power Efficiency for Mid-to-High Bands

• Frequency Range: 6 to 18 GHz
• Power Handling ( ): 20W
• Insertion Loss: 0.7 dB
• Isolation: 36 dB
• Linearity:   IIP3
• Control/Bias:   to 
• Package: Compact   QFN
• Link: Explore ATEK274N4

Why GaN on SiC for RF Switching?

In high-power RF system design, component survival and signal integrity under heavy loads are critical. Integrating GaN on SiC technology into MMIC switches provides exceptional thermal conductivity, superior breakdown voltage, and high power density compared to traditional GaAs or silicon solutions.

• Exceptional Robustness: Built to withstand harsh environments and high-RF-stress scenarios without degrading performance.
• Low Insertion Loss & High Isolation: Minimizes system insertion loss budget while protecting sensitive receiver paths or routing high-power transmitter outputs cleanly.
• Space-Saving Form Factor: Housed in a space-saving   QFN package, these components ease board-level layout constraints without sacrificing thermal performance.

Target Applications

These switches are custom-engineered for demanding, mission-critical applications where failure is not an option:

• Defense & Electronic Warfare (EW): High-reliability switching for jamming and threat mitigation systems.
• Radar Systems: Robust transmit/receive (T/R) module architectures handling high peak powers.
• SATCOM: Satellite communications payloads and ground terminals requiring broad bandwidth and high linearity.
• Automated Test Equipment (ATE): High-power signal routing in test and measurement setups.

Are you integrating high-power GaN switches into your next-gen radar or SATCOM architecture? Let us know your design challenges.

Get in touch for orders or any queries: sales@rfdesign.co.za / +27 21 555 8400

Courtesy of ATEK MIDAS