PMA5-123-3W+ RF Amplifier by Mini-Circuits
The PMA5-123-3W+ from Mini-Circuits is a GaAs MMIC Power Amplifier (PA) that operates from 8 to 12 GHz. This power amplifier delivers a saturated output power of 35.7 dBm (~3.7 W) with a gain of 28.3 dB and has a power-added efficiency (PAE) of 30 %. It is suitable for use as a driver stage or power amplifier in microwave radio, satellite communications, and radar systems that require high operating output power while maintaining very low distortion characteristics. This PA includes an integrated power detector that allows for seamless output power monitoring.
The PMA5-123-3W+ has a small footprint that saves space in dense layouts while providing low inductance, repeatable transitions, and excellent thermal contact with the PCB. This amplifier requires a DC supply of +7 V and consumes 1250 mA of current. It is available in a 32-lead QFN package that measures 5 x 5 mm. This RoHS-compliant amplifier is ideal for radar, EW, ECM, MIMO wireless infrastructure systems, and VSAT applications.
Product Details
- Part Number: PMA5-123-3W+
- Manufacturer: Mini Circuits
- Description: 3.5 W GaAs MMIC Power Amplifier from 8 to 12 GHz
General Parameters
- Type: Power Amplifier
- Configuration: IC/MMIC/SMT
- Application: Electronic Countermeasure (ECM), Radio, VSAT
- Industry Application: Electronic Warfare, Radar, Wireless Infrastructure
- Frequency: 8 to 12 GHz
- Gain: 27.7 to 29 dB
- Noise Figure: 6.1 to 8.7 dB
- P1dB: 2.2 to 3.3 W
- P1dB: 33.5 to 35.2 dBm
- Saturated Power: 34.4 to 36.1 dBm
- Saturated Power: 2.75 to 4.07 W
- Input Power: 27 dBm
- Input Power: 0.5 W
- Power Dissipation: 14.7 W
- PAE: 30 %
- Impedance: 50 Ohms
- Pulsed/CW: CW
- Reverse Isolation: 57 to 66 dB
- Input Return Loss: 10 to 18 dB
- Output Return Loss: 8 to 20 dB
- Supply Voltage: 6 to 8 V
- Current Consumption: 1250 mA
- Package Type: Surface Mount
- Package: 32-Lead QFN
- Dimensions: 5 x 5 mm
- Operating Temperature: -45 to 85 Degree C
- Storage Temperature: -65 to 150 Degree C
- RoHS: Yes
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