TGA2962 RF Amplifier by Qorvo
The TGA2962 from Qorvo is a GaN-on-SiC Power Amplifier that operates from 2 to 20 GHz. It provides 10 Watts of saturated output power with a large signal gain of 13 dB and a PAE of 22%. This amplifier requires 22 volts of power supply and is matched to 50 Ohms with integrated DC blocking capacitors and an RF choke. The PA is available as a die that measures 3.24 x 3.24 x 0.10 mm and is ideally suited for wideband communications systems, electronic warfare, test instrumentation, and radar applications, across both military and commercial markets.
Product Details
- Part Number: TGA2962
- Manufacturer: Qorvo
- Description: 10 W GaN Power Amplifier from 2 to 20 GHz
General Parameters
- Type: Power Amplifier
- Configuration: IC/MMIC/SMT
- Industry Application: Radar, Electronic Warfare, Test & Measurement, Cellular
- Frequency: 2 to 20 GHz
- Power Gain: 13 dB
- Small Signal Gain: 20 dB
- Output Power: 40 dBm
- Output Power: 10 W
- Saturated Power: 40 dBm
- Saturated Power: 10 W
- Input Power: 27 dBm
- PAE: 22.3 to 38 %
- Sub-Category: GaN Amplifier
- Input Return Loss: 12 to 23 dB
- Output Return Loss: 10 to 22 dB
- Supply Voltage: 22 V
- Current Consumption: 1680 mA
- Package Type: Surface Mount
- Dimensions: 3.24 x 3.24 x 0.10 mm
- Operating Temperature: -40 to 85 Degree C
- Storage Temperature: -55 to 125 Degree C
Courtesy of everythingRF
