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Watech’s High-Power LDMOS Transistors Deliver Up to 400 W for Industrial RF Applications

Watech’s High-Power LDMOS Transistors Deliver Up to 400 W for Industrial RF Applications

Watech’s High-Power LDMOS Transistors Deliver Up to 400 W for Industrial RF Applications

Watech Electronics has expanded its portfolio of high-performance discrete LDMOS transistors, tailored specifically for demanding industrial RF amplifier designs such as industrial heating, plasma generation, laser systems, and particle accelerators. The lineup features the high-power 400 W HT20340A & HT20340B alongside the versatile 100 W-class HTH8G03S130A & HTH8G03S130B. Combining high drain efficiency with exceptional load-mismatch tolerance, these components help engineers design rugged, highly reliable RF power systems while minimizing thermal and cooling overhead.

Key Highlights & Portfolio Overview

Engineering robust high-power RF systems involves managing more than just raw output power. Dissipated heat directly alters cooling specifications, while dynamic load changes can reflect high power back into the amplifier stage. Watech’s new LDMOS lineup addresses these challenges through:

  • High Efficiency: Reaching up to 79.5% efficiency to substantially lower power consumption and cooling requirements.
  • Superior Load Mismatch Tolerance: Built to survive severe load fluctuations common in industrial manufacturing and plasma environments.
  • High Gain: Reduces required input drive power from preceding amplification stages.
  • Comprehensive Reference Designs: Available evaluation boards (EVBs) at key frequencies (like 40.68 MHz and 230 MHz) accelerate the prototyping and testing phase.

 

Detailed Product Breakdown

1. HT20340A & HT20340B (400 W Power Solutions)

  • Frequency Range: 10 to 300 MHz
  • Saturated Output Power: 400 W
  • Operating Voltage: 50 V (55 V max)
  • Gain: 32.46 dB (at 40.68 MHz)
  • Efficiency: Up to 79.5%
  • Package Type: TO-247-3L
  • Highlights: The HT20340A is optimized for high-power generators operating around the 40.68 MHz ISM band and comes with a complete 40.68 MHz reference design. The HT20340B targets broad frequency architectures from 10 to 300 MHz, allowing manufacturers to standardize on a common high-power platform.

 

2. HTH8G03S130A & HTH8G03S130B (100 W-Class Compact Solutions)

  • Frequency Range: 1.8 to 300 MHz
  • Saturated Output Power: 130 W
  • Operating Voltage: 50 V
  • Gain: 18.24 dB (at 230 MHz)
  • Efficiency: Up to 78.8%
  • Package Type: TO220-3L
  • Highlights: Built for compact RF systems requiring ultra-wideband coverage (microwave heating, thawing, particle accelerators). Both feature integrated ESD protection, low thermal resistance, and an available 230 MHz reference design (EVB).

 

Comparison at a Glance

Product

Frequency Range

Output Power

Gain

Efficiency

Package

Key Differentiator

HT20340A

10–300 MHz

400 W

32.46 dB

Up to 79.5%

TO-247-3L

40.68 MHz reference design & EVB

HT20340B

10–300 MHz

400 W

32.46 dB

Up to 79.5%

TO-247-3L

High-power broadband RF platform

HTH8G03S130A

1.8–300 MHz

130 W

18.24 dB

Up to 78.8%

TO220-3L

Wide frequency coverage with 230 MHz EVB

HTH8G03S130B

1.8–300 MHz

130 W

18.24 dB

Up to 78.8%

TO220-3L

Compact broadband 100 W solution

Get in touch for orders or any queries: sales@rfdesign.co.za / +27 21 555 8400

Courtesy of Watech Electronics (WATECH)

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