The QPA0018 from Qorvo is a GaN Power Amplifier that operates from 5.2 to 5.9 GHz. It is fabricated using Qorvo’s 0.25 µm GaN-on-SiC process (QGaN25HV) and is designed for military radar and electronic warfare applications. This amplifier delivers a saturated output power of 54 dBm with a large-signal gain of 28 dB and a power-added efficiency of 52%. Its RF input and output ports are internally matched to 50 ohms.
The QPA0018 incorporates DC-blocking capacitors on both RF ports and supports a range of bias voltages to accommodate different operating requirements. It is available in a 60-pin plastic overmolded QFN package measuring 8 × 9 mm. This RoHS-compliant PA is suitable for high-power C-band radar and electronic warfare applications.
Product Details
General Parameters
Parameter | Specification |
Type | Power Amplifier |
Configuration | IC/MMIC/SMT |
Application | Radar, Electronic Warfare |
Industry Application | Aerospace & Defense |
Frequency | 5200 to 5900 MHz |
Gain | 28 dB |
Saturated Power | 54 dBm |
Saturated Power (W) | 251.18 W |
Power-Added Efficiency (PAE) | 52% |
Sub-Category | GaN Amplifier |
Supply Voltage | 50 V |
Transistor Technology | GaN |
Technology | GaN on SiC |
Package | QFN |
Dimensions | 8.0 × 9.0 mm |
RoHS | Yes |
Get in touch for orders or any queries: sales@rfdesign.co.za / +27 21 555 8400
Courtesy of Qorvo
