Sumitomo Electric’s GaN-HEMT SGN2833-200L-R

Sumitomo Electric’s GaN-HEMT SGN2833-200L-R

Part Number SGN2833-200L-R
Class GaN Product > GaN HEMTs for Radar
Outline / Package Code IV
Function High Voltage – High Power GaN-HEMT for Radar
Features
  • High Power: 280W (Typ.) @ Pin = 16W (42dBm)
  • High Efficiency: 60% (Typ.) @ Pin = 16W (42dBm)
  • Broad Band: 2.75 to 3.3GHz
  • Impedance Matched Zin/Zout = 50Ω
  • Hermetically Sealed Package
Description Sumitomo Electric’s GaN-HEMT SGN2833-200L-R offers high power, high efficiency and greater consistency covering 2.75 to 3.3GHz for S-band radar applications with 50V operation.
Datasheet 326KB PDF
Frequency (GHz) 2.75–3.3
Pout (dBm) 54.5
Power Gain (dB) 12.5
Efficiency (%) 60
VDS (V) 50
IDS (DC) (A) 0.5
Condition Pulse width: 200µsec, Duty: 10%
Note Tc(op) = +25°C

Get in touch for orders or any queries: sales@rfdesign.co.za / +27 21 555 8400

Courtesy of Sumitomo Electric Device Innovations

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