Qorvo QPD1426

The QPD1426 from Qorvo is a Discrete GaN-on-SiC HEMT RF Power Transistor that operates from 1.2 to 1.4 GHz. This power transistor delivers 53.5 dBm (~220 W) of output power, with a linear gain of 20.8 dB and 72.1% drain efficiency. It supports both pulsed and CW operation and is suitable for compact, SWaP-optimized power amplifier designs.

The QPD1426 requires a drain voltage of 50 V and draws a drain bias current of 350 mA. It is available in an NI-400 package measuring 0.4 × 0.4 × 0.160 inches and has a ceramic/metal package base with a ceramic lid. This lead-free, RoHS-compliant transistor is suitable for L-band radar, military and civilian radar, professional and military radio communications, test instrumentation, wideband or narrowband amplifiers, GPS communications, and avionics applications.

Key Features

• Operating Frequency Range: 1.2 – 1.4 GHz
• Saturated Output Power P_SAT: 53.5 dBm
• Drain Efficiency at P_SAT: 70%
• Large Signal Gain at P_SAT: 17 dB
• Bias: V_DS = +50 V, I_DQ = 350 mA
• Package Type: NI-400
• Package Dimensions: 10.16 x 10.16 mm

Typical Applications

• L-Band Radar
• Professional and Military Radio Communications
• Test Instrumentation

Parameters

• Frequency Min (MHz): 1,200
• Frequency Max (MHz): 1,400
• Gain (dB): 17
• Psat (dBm): 53.5
• Vd (V): 50
• Package Type: NI-400
• RoHS: Yes
• Lead Free: Yes
• Halogen Free: Yes
• ITAR Restricted: No
• ECCN: EAR99

Get in touch for orders or any queries: sales@rfdesign.co.za / +27 21 555 8400

Download Datasheet

Courtesy of Qorvo