Qorvo QPD2562L

2.5 – 3.5 GHz, 200 W GaN on SiC RF Transistor

The QPD2562L is a 200 W – 300 W discrete GaN on SiC HEMT which operates from 2.5 to 2.9 GHz and 2.9 to 3.3 GHz providing typically up to 55.4 dBm / 53 dBm respectively, of saturated output power with 13 dB of large-signal gain and 50% / 45% respectively, of drain efficiency.

Input pre-match within the package results in ease of external board match and saves board space. The device is housed in an industry standard air cavity package and is ideally suited for Radar applications. The device can support both CW and pulsed operations.

Evaluation boards are available upon request.

Key Features

• Operating Frequency Range: 2.5 – 2.9 GHz, 2.9 – 3.3 GHz
• Saturated Output Power P_SAT: 54.8 dBm, 53 dBm
• Drain Efficiency at P_SAT: 50%, 45%
• Large Signal Gain at P_SAT: 13 dB
• Bias: V_DS = +50 V, I_DQ = 440 mA
• Package Type: NI-650
• Package Dimensions: 29.00 x 5.84 mm

Typical Applications

• S-Band Radar
• ISM
• Communications
• Electronic Warfare

Parameters

• Frequency Min (MHz): 2,900
• Frequency Max (MHz): 3,300
• Gain (dB): 13
• Psat (dBm): 53
• Vd (V): 50
• Package Type: NI-650

Get in touch for orders or any queries: sales@rfdesign.co.za / +27 21 555 8400

Download Datasheet

Courtesy of Qorvo