GNA-63-5W+ RF Amplifier by Mini-Circuits
The GNA-63-5W+ from Mini-Circuits is a GaN MMIC Power Amplifier (PA) that operates from 10 MHz to 6 GHz. It is designed for high-power RF applications requiring high efficiency, excellent linearity, and a compact footprint. This PA delivers a saturated output power of +38.5 dBm (~6 W) with a large-signal gain of 12 dB and a power-added efficiency of 35%. It is manufactured using a GaN-on-SiC HEMT process and is matched to 50Ω at the input and output ports. This power amplifier has an input return loss of 10 dB and an output return loss of 7 dB.
The GNA-63-5W+ requires a 28 V DC supply and draws 400 mA of quiescent current. This RoHS-compliant amplifier is available in a 32-lead QFN package measuring 5 x 5 mm. It is ideal for use in land mobile and military radio systems, radar, electronic warfare, ECM, satellite communications, and test and measurement applications.
Product Details
- Part Number: GNA-63-5W+
- Manufacturer: Mini Circuits
- Description: 6 W GaN MMIC Power Amplifier from 10 MHz to 6 GHz
General Parameters
- Configuration: IC/MMIC/SMT
- Industry Application: Aerospace & Defense, Test & Measurement
- Frequency: 10 MHz to 6 GHz
- Gain: 11.7 to 13.5 dB
- Gain Flatness: -1 to 1 dB
- Output Power: 37.5 to 39.4 dBm
- IM3: -32 dBc
- IP3: 50 to 55 dBm
- Linear Power: 6 to 8.7 W
- Input Power: -25 to 26 dBm
- Power Dissipation: 16.9 W (Maximum)
- Impedance: 50 Ohms
- Pulsed/CW: CW
- Reverse Isolation: 31.7 dB
- Input Return Loss: 10 to 20 dB
- Output Return Loss: 7 to 14 dB
- Harmonics: -70 to -20 dBc
- Supply Voltage: 20 to 28 VAC
- Current Consumption: 100 to 400 mA
- Transistor Technology: GaN-on-SiC HEMT
- Technology: GaN-on-SiC HEMT MMIC
- Package Type: Surface Mount
- Dimensions: 5 × 5 mm
- Weight: 0.056 g
- Operating Temperature: -55 to 95 Degree C
- Storage Temperature: -65 to 150 Degree C
- RoHS: Yes
Get in touch for orders or any queries: sales@rfdesign.co.za / +27 21 555 8400
Courtesy of Mini-Circuits
