Qorvo Unveils Integrated Wi-Fi 7 Front-End Module Covering the Entire 6 GHz Band

Qorvo Unveils Integrated Wi-Fi 7 Front-End Module Covering the Entire 6 GHz Band

Qorvo Unveils Integrated Wi-Fi 7 Front-End Module Covering the Entire 6 GHz Band Qorvo has introduced the QPF4609E, a highly integrated front-end module (FEM) for Wi-Fi 7 (802.11be) applications operating across the 5.925-7.125 GHz frequency range. Designed to address the growing demand for RF front-end solutions that support wider channel bandwidths, higher throughput, and improved spectral efficiency while maintaining...
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MBAL-0220PSM Balun by Marki Microwave

MBAL-0220PSM Balun by Marki Microwave

MBAL-0220PSM Balun by Marki Microwave The MBAL-0220PSM from Marki Microwave is a MMIC Isolation Balun that operates from 2 to 20 GHz. It is fabricated using GaAs technology and provides a 2:1 impedance ratio for balanced-to-unbalanced signal conversion with a nominal phase shift of 180°. This balun has an insertion loss of 2.7 dB and...
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Sumitomo Electric's GaN-HEMT SGN2731-800L-R

Sumitomo Electric’s GaN-HEMT SGN2731-800L-R

Sumitomo Electric's GaN-HEMT SGN2731-800L-R Part Number SGN2731-800L-R Class GaN Product > GaN HEMTs for Radar Outline / Package Code M2C Function High Voltage - High Power GaN-HEMT for Radar Features High Power: 1000W (Typ.) High Efficiency: 62% (Typ.) Broad Band: 2.7 to 3.1GHz Ease of Matching: Input / Output Pre-matched for 3.1GHz Small Flangeless Package...
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Sumitomo Electric’s GaN-HEMT SGN2833-200L-R

Sumitomo Electric's GaN-HEMT SGN2833-200L-R Part Number SGN2833-200L-R Class GaN Product > GaN HEMTs for Radar Outline / Package Code IV Function High Voltage - High Power GaN-HEMT for Radar Features High Power: 280W (Typ.) @ Pin = 16W (42dBm) High Efficiency: 60% (Typ.) @ Pin = 16W (42dBm) Broad Band: 2.75 to 3.3GHz Impedance Matched...
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Watech Electronics HRN160S065

Watech Electronics HRN160S065

Watech Electronics HRN160S065 RugSiC (Rugged-SiC) is a high-robustness silicon carbide device featuring exceptional reliability and GaN-comparable high-frequency performance. It is the first new-concept semiconductor device independently invented in China with fully owned IP since the transistor’s birth in 1947, and is expected to serve as a key component across global consumer and industrial applications. Features: -...
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Six Proven Antenna Solutions for Modern IoT Applications

Six Proven Antenna Solutions for Modern IoT Applications

Six Proven Antenna Solutions for Modern IoT Applications Taoglas high-performance embedded cellular antennas designed for today's connected devices across 4G LTE, 5G, NB-IoT, Cat-M, and NTN applications. Whether you're designing compact IoT devices, industrial equipment, healthcare products, or next-generation connected solutions, Taoglas offers proven antenna solutions that help accelerate development, simplify integration, and maximize wireless...
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Introducing the Mini-Circuits Research Hub

Introducing the Mini-Circuits Research Hub

Introducing the Mini-Circuits Research Hub ENGINEERING RESOURCES - RF Research Hub: 7400+ Scholarly Articles Citing Mini-Circuits Products Mini-Circuits is excite to share a new resource with the RF and microwave community. The Mini-Circuits Research Hub is now live — a curated library of over 7,000 peer-reviewed academic publications and journal articles citing Mini-Circuits products in experimental setups...
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