HTH8G03S130A RF Amplifier by Watech Electronics

The HTH8G03S130A from Watech Electronics is a Discrete LDMOS Power Amplifier (PA) that operates from 1.8 to 300 MHz. It delivers a saturated output power of 51.05 dBm (~130 W) with a gain of 18.24 dB and an efficiency of 75.28%. This PA also integrates ESD protection capability for enhanced electrical protection. It requires a drain voltage of 50 V and draws less than 100 mA of quiescent drain current.

The HTH8G03S130A is available in a through-hole package that measures 15.15 x 9.96 mm. The package exhibits low thermal resistance characteristics, thereby offering thermal stability. This RoHS-compliant amplifier is ideal for microwave heating and thawing, laser generation, plasma generation, particle accelerators, and other RF energy applications.

Product Details

• Part Number: HTH8G03S130A
• Manufacturer: Watech Electronics
• Description: 130 W Discrete LDMOS Power Amplifier from 1.8 to 300 MHz

General Parameters

• Type: Power Amplifier
• Configuration: IC/MMIC/SMT
• Application: RF Energy, Plasma Generator
• Display Application: Microwave thawing, Laser generation, Particle accelerators
• Frequency: 1.8 to 300 MHz
• Gain: 18.24 dB
• Output Power: 100 to 130 W
• P1dB: 51.05 dBm
• P1dB: 127.35 W
• Saturated Power: 130 W
• PAE: 75.28 to 78.78 %
• Impedance: 50 Ohms
• Pulsed/CW: CW/Pulsed
• Sub-Category: Pulsed Amplifer
• Supply Voltage: 50 V
• Current Consumption: 100 mA
• Technology: LDMOS
• Package Type: Drop-In
• Dimensions: 15.15 x 9.96 mm
• Storage Temperature: -55 to 150 Degree C
• RoHS: Yes

Get in touch for orders or any queries: sales@rfdesign.co.za / +27 21 555 8400

Courtesy of Watech Electronics (WATECH)