CMX90A702 RF Amplifier by CML Microcircuits
The CMX90A702 from CML Microcircuits is a three-stage GaAs MMIC Power Amplifier that operates in the 5G FR2 band from 26.5 to 29.5 GHz. This power amplifier delivers an output P1dB of 26.7 dBm, a small signal gain of 22.5 dB, and a Power Added Efficiency (PAE) of 28%. It requires a DC supply of +4 V and consumes 182 mA of current. This RoHS power amplifier is matched to 50 ? and integrates a DC blocking capacitor at the output. It is easy to monitor and control using an on-chip temperature-compensated RF power detector and fast-switching enable circuit. This GaAs power amplifier utilizes an enhancement-mode pHEMT process that results in only a single DC supply operation. It is available in a surface-mount package that measures 4 x 4 mm and is ideal for 5G mmWave infrastructure, fixed wireless access (FWA), repeaters, small cells, customer premises equipment (CPE), passive phased array antennas, and 5G backhaul applications.
Product Details
- Part Number: CMX90A702
- Manufacturer: CML Microcircuits
- Description: GaAs MMIC Power Amplifier from 26.5 to 29.5 GHz for Wireless Infrastructure Applications
General Parameters
- Type: Power Amplifier
- Configuration: IC/MMIC/SMT
- Standards Supported: 5G NR
- Industry Application: Cellular
- Frequency: 26.5 to 29.5 GHz
- Small Signal Gain: 21 dB
- Output Power: 25 dBm
- Output Power: 0.32 W
- P1dB: 25 dBm
- P1dB: 0.3162 W
- IP3: 32.5 dBm
- Impedance: 50 Ohms
- Pulsed/CW: CW
- Supply Voltage: 4 V
- Current Consumption: 182 mA
- Transistor Technology: GaAs pHEMT
- Package Type: Surface Mount
- Package: VQFN-20
- Dimensions: 4 x 4 mm
- Operating Temperature: -40 to 85 Degree C
- Storage Temperature: -40 to 125 Degree C
- Tags: SµRF Range
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