PMA5-83-LV+ RF Amplifier by Mini-Circuits

The PMA5-83-LV+ from Mini-Circuits is a GaAs Distributed Medium Power Amplifier MMIC that operates from 0.01 to 10 GHz. It delivers a saturated output power of 31.2 dBm (~1.3 W) with a gain of 18.6 dB. This power amplifier is suitable for wideband test instrumentation and defense systems that require high operating output power. It has high operating OIP3 and provides low 2nd and 3rd harmonic responses to ensure very low in-band distortion products, enabling minimal signal degradation in high-fidelity measurement systems.

The PMA5-83-LV+ has a small footprint that saves space in dense layouts while providing low inductance, repeatable transitions, and excellent thermal contact with the PCB. This amplifier requires a DC supply of +8 V and consumes 400 mA of current. It is available in a 32-lead QFN package that measures 5 x 5 mm. This RoHS-compliant amplifier is ideal for radar, EW, ECM, 5G Sub-6 GHz, MIMO wireless infrastructure systems, and VSAT applications.

Product Details

• Part Number: PMA5-83-LV+
• Manufacturer: Mini Circuits
• Description: GaAs Distributed Medium Power Amplifier MMIC from 0.01 to 10 GHz
  

General Parameters

• Type: Power Amplifier
• Configuration: IC/MMIC/SMT
• Application: Electronic Countermeasure (ECM), Radio, Satellite
• Standards Supported: 5G, VSAT
• Industry Application: Test & Measurement, Radar, Electronic Warfare, Cellular, Wireless Infrastructure, Broadcast, SATCOM, Aerospace & Defense
• Frequency: 0.01 to 10 GHz
• Gain: 11.2 to 18.6 dB
• Noise Figure : 2.6 dB
• P1dB: 25.2 to 28.7 dBm
• P1dB: 0.33 to 0.74 W
• IP2: 44.1 to 52.6 dBm
• IP2: 25.7 to 181.9 W
• IP3: 36.9 to 43 dBm
• IP3: 4.89 to 19.95 W
• Linear Power: 30 dBm
• Linear Power: 1 W
• Saturated Power: 29.1 to 31.2 dBm
• Saturated Power: 0.81 to 1.31 W
• Input Power: 31 dBm
• Power Dissipation: 7 W
• Impedance: 50 Ohms
• Pulsed/CW: CW
• Sub-Category: Distributed Amplifier
• Return Loss: 10 to 32 dB
• Input Return Loss: 12 to 32 dB
• Output Return Loss: 10 to 22 dB
• Harmonics: -46.7 to -39.9 dBc
• Supply Voltage: 6 to 10 V
• Current Consumption: 400 mA
• Technology: GaAs
• Package Type: Surface Mount
• Package: 32-Lead QFN
• Dimensions: 5 x 5 mm
• Operating Temperature: -45 to 85 Degree C
• Storage Temperature: -65 to 150 Degree C
• Tags: PMA5-xx Series
• RoHS: Ye
• Note: Isolation : 32 to 82 dB, Gate Voltage : -2 to 4 dB, Gate Current : 15 to 4000 µA, DC Current Variation vs. Temperature : 0.634 mA/°C

Courtesy of everything RF