PMA3-43-1W+ RF Amplifier by Mini-Circuits

PMA3-43-1W+ RF Amplifier by Mini-Circuits

PMA3-43-1W+ RF Amplifier by Mini-Circuits

The PMA3-43-1W+ from Mini-Circuits is a GaAs Power Amplifier (PA) MMIC that operates from 10 to 4000 MHz. It delivers a saturated output power of +32.6 dBm (~1.8 W) with a gain of 21 dB. This PA is manufactured using GaAs MMIC technology that combines high operating output power with low noise figure, enabling a significant signal-to-noise ratio (SNR) advantage for systems requiring high dynamic range. It also has a high OIP3 and low 2nd and 3rd order harmonic responses, which provide very low in-band distortion products that are typically needed for high fidelity measurement systems.

The PMA3-43-1W+ has a small footprint that saves PCB space in dense layouts while providing low inductance, repeatable transitions and excellent thermal contact with the PCB. This RoHS-compliant amplifier is available in a 12-lead QFN package that measures 3 x 3 mm, allowing for ease of assembly in high volume manufacturing processes. It is ideal for test and measurement, EW, ECM, 5G sub-6, MIMO wireless infrastructure, microwave radio, VSAT, and radar applications.

Product Details

  • Part Number: PMA3-43-1W+
  • Manufacturer: Mini Circuits
  • Description: 1.8 W GaAs Power Amplifier MMIC from 10 MHz to 4 GHz

General Parameters

  • Type: Power Amplifier
  • Configuration: IC/MMIC/SMT
  • Application: Electronic Countermeasure (ECM), Radio, VSAT
  • Industry Application: Electronic Warfare, Radar, Test & Measurement, Wireless Infrastructur
  • Frequency: 10 MHz to 4 GHz
  • Gain: 20.2 to 25.9 dB
  • Noise Figure: 2.5 to 7.1 dB
  • P1dB: 0.912 to 1.73 W
  • P1dB: 29.6 to 32.4 dBm
  • IP3: 35 to 38 dBm
  • IP3: 3.16 to 6.3 W
  • Saturated Power: 31.1 to 32.8 dBm
  • Saturated Power: 1.28 to 1.9 W
  • Input Power: 17 dBm
  • Power Dissipation: 5.5 W
  • Impedance: 50 Ohms
  • Pulsed/CW: CW
  • Reverse Isolation: 29 dB
  • Input Return Loss: 11 to 16 Db
  • Output Return Loss: 11 to 15 dB
  • Harmonics: -53 to -21 dBc
  • Supply Voltage: 10 to 12.5 V
  • Current Consumption: 190 mA
  • Technology: GaAs
  • Package Type: Surface Mount
  • Package: 12-Lead QFN
  • Dimensions: 3 x 3 mm
  • Weight: 0.02 g
  • Operating Temperature: -55 to 85 Degree C
  • Storage Temperature: -65 to 150 Degree C
  • RoHS: Yes

Get in touch for orders or any queries: sales@rfdesign.co.za / +27 21 555 8400

Courtesy of everything RF

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