TAV1-541NM+ RF Transistor by Mini Circuits
The TAV1-541NM+ from Mini Circuits is a RF Transistor with Frequency 0.045 to 6 GHz, Power 18.2 to 20.8 dBm, Power(W) 0.06 to 0.12 W, P1dB 18.2 to 20.8 dBm, OIP3 31.4 to 34.9 dB. Tags: Surface Mount. More details for TAV1-541NM+ can be seen below.
Product Details
- Part Number: TAV1-541NM+
- Manufacturer: Mini Circuits
- Description: SMT MMIC MIMO Low Noise, Medium Power Linear Transistor from 0.045 to 6 GHz
General Parameters
- Transistor Type: E-pHEMT
- Application Industry: Cellular, Broadcast
- Application: MRI Systems, ISM Band, 5G, Radio, Tactical Communications, Wi-Fi
- CW/Pulse: CW
- Frequency: 0.045 to 6 GHz
- Power: 18.2 to 20.8 dBm
- Power(W): 0.06 to 0.12 W
- P1dB: 18.2 to 20.8 dBm
- OIP3: 31.4 to 34.9 dB
- Gain: 8.9 to 24.1 dB
- Noise Figure: 0.4 to 1.7 dB
- Transconductance: 230 to 560 ms
- Class: Class 1A
- Collector Emmiter Voltage: 560
- Supply Voltage: 3 to 4 V
- Threshold Voltage: 0.18 to 0.38 V
- Input Power: 17 dBm
- Breakdown Voltage: 230
- Voltage – Drain-Source (Vdss): 5 V
- Voltage – Gate-Source (Vgs): 0.37 to 0.69 V
- Current: 60 mA
- Drain Current: 120 mA
- Drain Leakage Current (Id): 1 to 5 µA
- Gate Leakage Current (Ig): 200 µA
- Power Dissipation (Pdiss): 360 mW
- Impedance Zs: 50 Ohms
- Junction Temperature (Tj): 150 Degree C
- Thermal Resistance: 160 Degree C/W
- Package Type: Surface Mount
- RoHS: Yes
- Operating Temperature: -40 to 85 Degree C
- Storage Temperature: -65 to 150 Degree C
- Note: Isolation: 21.6 to 27.8 dB, Output Return Loss: 9.8 to 15.3 dB, Gate Current: 2mA
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