CMX90A705 RF Amplifier by CML Microcircuits
The CMX90A705 from CML Microcircuits is a Two-Stage GaN Power Amplifier that operates from 27.5 to 31 GHz. It delivers a saturated output power of 5.5 W (~37.4 dBm) with a small signal gain of 16.5 dB and PAE of 22%. This Ka-Band amplifier is fabricated using a state-of-the-art 0.15 µm gate length GaN-on-SiC process. It requires a DC supply of 22 to 28 V and consumes 860 mA of current.
The CMX90A705 incorporates on-chip 50 Ohms nominal matching with integrated DC blocking capacitors at the I/O ports. This power amplifier is available in an AQFN-12 package that measures 4 x 4 mm. It can be used as both driver stage and final stage power amplifier in commercial satellite communication terminals, residential satellite internet, telecommunication, and commercial VSAT applications.
Product Details
- Part Number: CMX90A705
- Manufacturer: CML Microcircuits
- Description: 5.5 W Two-stage GaN Power Amplifier from 27.5 to 31 GHz
General Parameters
- Type: Power Amplifier
- Configuration: IC/MMIC/SMT
- Application: VSAT
- Industry Application: SATCOM
- Frequency: 27.5 to 31 GHz
- Gain: 14 to 17 dB
- Small Signal Gain: 14 to 17 dB
- IP3: 42 dBm
- Saturated Power: 5.5 W
- PAE: 22 %
- Impedance: 50 Ohms
- Pulsed/CW: CW
- Reverse Isolation: 43 dB
- Sub-Category: GaN Amplifier
- Input Return Loss: 10 dB
- Output Return Loss: 9 dB
- Supply Voltage: 22 to 28 V
- Current Consumption: 182 mA
- Transistor Technology: GaN-on-SiC
- Package Type: Surface Mount
- Package: AQFN-12
- Dimensions: 4 x 4 mm
- Operating Temperature: -40 to 85 Degree C
- Storage Temperature: -40 to 125 Degree C
- Tags: SµRF Range
Courtesy of CML Micro
