QPL1000 RF Amplifier by Qorvo
The QPL1000 from Qorvo is a GaN Low Noise Amplifier that operates from 8 to 11 GHz. It delivers a small signal gain of 27 dB with a noise figure of 1.7 dB. The LNA is fabricated using Qorvo’s production 0.25 um, GaN (Gen II) process which enables it to withstand an input power of up to 5 W, while delivering a saturated power of 15 dBm with low IM3 levels of −24 dBc (at Pout= +6 dBm / tone). It requires a DC supply of 10 V and consumes 20 mA of current. This RoHS compliant amplifier is matched to 50 ohms and has integrated DC blocking caps on both I/O ports for easy handling and simple system integration. It is available in a plastic over-mold QFN package that measures 4.00 x 4.00 x 0.85 mm and is ideal for satellite communications, point-to-point communications, defense & aerospace communications, electronic warfare, and RADAR applications.
Product Details
- Part Number: QPL1000
- Manufacturer: Qorvo
- Description: GaN Low Noise Amplifier from 8 to 11 GHz
General Parameters
- Type: Low Noise Amplifier
- Configuration: IC/MMIC/SMT
- Application: Communication, Point to point communication
- Industry Application: SATCOM
- Frequency: 8 to 11 GHz
- Small Signal Gain: 27 dB
- Noise Figure: 1.7 dB
- P1dB: 9 dBm
- P1dB: 0.007 W
- Grade: Commercial, Space
- Saturated Power: 15 dBm
- Saturated Power: 0.0316 W
- Input Power: 37 dBm
- Input Power: 5 W
- Impedance: 50 Ohms
- Pulsed/CW: CW
- Sub-Category: GaN Amplifier
- Input Return Loss: 13 dB
- Output Return Loss: 12 dB
- Supply Voltage: 10 V
- Current Consumption: 20 mA
- Package Type: Surface Mount
- Package: Plastic Over-mold Package
- Dimensions: 4.0 x 4.0 x 0.85 mm
- Operating Temperature: -40 to 95 Degree C
- Storage Temperature: -55 to 150 Degree C
- RoHS: Yes
Courtesy of everything RF
