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QPB8958 RF Amplifier by Qorvo

QPB8958 RF Amplifier by Qorvo

Courtesy of everything RF : QPB8958 RF Amplifier by Qorvo

The QPB8958 is a GaAs pHEMT/MESFET 75-ohm push-pull RF amplifier IC that provides over 34 dB of flat gain at 1003 MHz. This IC is designed to support DOCSIS 3.1 applications and uses a single 24 V supply. The amplifier provides low noise and low distortion at high efficiency consuming only 5.8 W of input power. It is available in a 5.0 x 7.0 QFN package and is ideally suited for CATV hybrid modules, 75-Ohm amplifiers and head end CMTS equipment applications. The QPB8958 is a GaAs pHEMT/MESFET 75-ohm push-pull RF amplifier IC that provides over 34 dB of flat gain at 1003 MHz. This IC is designed to support DOCSIS 3.1 applications and uses a single 24 V supply. The amplifier provides low noise and low distortion at high efficiency consuming only 5.8 W of input power. It is available in a 5.0 x 7.0 QFN package and is ideally suited for CATV hybrid modules, 75-Ohm amplifiers and head end CMTS equipment applications.

Product Details

    • Part Number : QPB8958
    • Manufacturer : Qorvo
    • Description : 75 Ohm CATV Push-Pull Amplifier from 50 to 1003 MHz

General Parameters

    • Type : CATV Amplifier
    • Configuration : IC/MMIC/SMT
    • Frequency : 47 to 1003 MHz
    • Gain : 34 dB
    • Gain Flatness : +/-0.5 dB
    • Noise Figure : 4 dB
    • P1dB : 27 dBm
    • P1dB : 0.5 W
    • IP3 : 49 to 51 dBm
    • Impedance : 75 Ohms
    • Sub-Category : Push-Pull Amplifier
    • Return Loss : 18 dB
    • Supply Voltage : 24 V
    • Current Consumption : 260 mA
    • Package Type : Surface Mount
    • Package : 40 Pin QFN
    • Dimensions : 5 x 7 mm
    • Operating Temperature : -40 to 100 Degrees C
    • Storage Temperature : -65 to 150 Degrees C
QPL9098 RF Amplifier by Qorvo

QPL9098 RF Amplifier by Qorvo

Courtesy of everything RF : QPL9098 RF Amplifier by Qorvo

The QPL9098 is an ultra-low noise gain block amplifier that operates from 4 to 6 GHz. At 5.5 GHz, the amplifier provides a gain of 19 dB, OIP3 of 32 dBm and a noise figure of 1.3 dB while drawing 68 mA current from a 4.2 V supply. The LNA integrates a bypass path and is internally matched to 50 ohms. It requires only four external components for operation from a single positive supply: an external RF choke and blocking/bypass capacitors. The QPL9098 is available in a 2 x 2 mm DFN package and is ideal for TDD or FDD systems, repeaters, base-station receivers and tower mount amplifier applications. This amplifier uses a high performance E-pHEMT process.

Product Details

    • Part Number : QPL9098
    • Manufacturer : Qorvo
    • Description : Low Noise Gain Block Amplifier from 4 to 6 GHz

General Parameters

    • Type : Low Noise Amplifier
    • Configuration : IC/MMIC/SMT
    • Industry Application : Cellular, Wireless Infrastructure
    • Frequency : 4 to 6 GHz
    • Gain : 17.5 to 22.5 dB
    • Noise Figure : 1.3 to 1.8 dB
    • Output Power : 0.039 W
    • P1dB : 14 to 16 dBm
    • P1dB : 0.025 to 0.0139 W
    • IP3 : 32 dBm(LNA Mode), 40 dBm Bypass Mode
    • Pulsed/CW : CW
    • Supply Voltage : 3 to 2.25 V
    • Package Type : Surface Mount
    • Package : 8 Pin DFN
    • Dimensions : 2 x 2 mm
    • Operating Temperature : -40 to 105 Degrees C
    • Storage Temperature : -65 to 150 Degrees C
QPA2308D RF Amplifier by Qorvo

QPA2308D RF Amplifier by Qorvo

Courtesy of everything RF : QPA2308D RF Amplifier by Qorvo

The QPA2308D from Qorvo is a RF Amplifier with Frequency 5 to 6 GHz, Power Gain 21 dB, Small Signal Gain 31 dB, Saturated Power 60 W, PAE 43 %. Tags: Power Amplifier. More details for QPA2308D can be seen below.

Product Details

      • Part Number : QPA2308D
      • Manufacturer : Qorvo
      • Description : 60 W GaN Power Amplifier from 5 to 6 GHz

General Parameters

      • Type : Power Amplifier
      • Configuration : Die
      • Industry Application : Radar, SATCOM
      • Frequency : 5 to 6 GHz
      • Power Gain : 21 dB
      • Small Signal Gain : 31 dB
      • Grade : Commercial, Military
      • Saturated Power : 60 W
      • PAE : 43 %
      • Impedance : 50 Ohms
      • Sub-Category : GaN Amplifier
      • Input Return Loss : 12 to 27 dB
      • Output Return Loss : 12 to 13 dB
      • Supply Voltage : 28 V
      • Dimensions : 4.272 x 5.070 x 0.10 mm
      • Operating Temperature : -40 to 85 Degrees C
      • Storage Temperature : -55 to 125 Degrees C
      • RoHS : Yes
Qorvo QPQ1270

QPQ1270 RF Duplexer by Qorvo

Courtesy of everything RF : QPQ1270 RF Duplexer by Qorvo

The QPQ1270 from Qorvo is a RF Duplexer with Frequency 2500-2570 MHz / 2620-2690 MHz, Band 1 2500 to 2570 MHz, Band 2 2620 to 2690 MHz, Power 1 W, Insertion Loss 2.4 dB. Tags: Surface Mount. More details for QPQ1270 can be seen below.

Product Details

    • Part Number : QPQ1270
    • Manufacturer : Qorvo
    • Description : LTE Band 7 Baw Duplexer

General Parameters

    • Frequency : 2500-2570 MHz / 2620-2690 MHz
    • Band 1 : 2500 to 2570 MHz
    • Band 2 : 2620 to 2690 MHz
    • Power : 1 W
    • Insertion Loss : 2.4 dB
    • Isolation : 54 to 61 dB
    • Attenuation : 10 to 58 dB
    • Return Loss : 8.3 to 12.2
    • Application : Base Station, Cellular, Repeaters
    • Package Type : Surface Mount
    • package : 9-pin SMP
    • Dimension : 2.00 mm x 2.50 mm x 1.015 mm
    • Operating temperature : -40 to 105 Degrees C
    • Storage temperature : -40 to 125 Degrees C
QPF4588

QPF4588 Front End Module by Qorvo

Courtesy of everything RF : QPF4588 Front End Module by Qorvo

The QPF4588 from Qorvo is a front end module for WiFi 6 (802.11ax) access points from 5150 to 5925 MHz. The FEM consists of a 5 GHz power amplifier (PA), regulator, single pole two throw switch (SP2T), bypassable low noise amplifier (LNA), coupler and power detector with optional DC voltage or RF signal output. The QPF4588 offers 33 dB of Tx gain and 16 dB of Rx gain with LNA noise figure of 2.0 dB. It has integrated 2.4 GHz filters that provide rejection on the receive path to reduce system-level filtering. It is available in compact surface mount package that measures 5 x 3 mm.

Product Details

    • Part Number : QPF4588
    • Manufacturer : Qorvo
    • Description : FEM for Wi-Fi 6 (802.11ax) Applications from 5150 to 5925 MHz

General Parameters

    • Type : Transmit / Receive Module
    • Configuration : Low Noise Amplifier, Power Amplifier, Switch, Power Detector, Power Detector Coupler
    • Switch Configuration : SPDT
    • Application : WiFi
    • Wireless Standard : 802.11 ax
    • Bands : Single Band
    • Frequency : 4900 to 5925 MHz
    • Tx Power : 16 to 32 dBm
    • Tx Gain : 33 dB
    • Tx Current : 290 to 305 mA
    • Voltage : 5 V
    • Rx Gain : 16 dB
    • Rx Noise Figure : 2 dB
    • Rx Current : 20 mA
    • Package Type : Surface Mount
    • Package : QFN
    • Dimensions : 5.0 x 3.0 mm
    • RoHS : Yes
QPA2213D RF Amplifier by Qorvo

QPA2213D RF Amplifier by Qorvo

Courtesy of Qorvo : QPA2213D RF Amplifier

The QPA2213D is a wide band GaN driver amplifier MMIC that operates from 2 to 20 GHz. This amplifier provides over 2 watts of saturated power with a gain of 16 dB and PAE of 23%. It has DC blocking capacitors on both RF ports, which are matched to 50 ohms. The amplifier is ideal for both commercial and military wide band systems.

This amplifier has been fabricated on Qorvo’s production 0.15 um GaN on SiC process (QGaN15) and is available as a die that measures 2.75 x 2.75 x 0.10 mm.

Product Details

    • Part Number : QPA2213D
    • Manufacturer : Qorvo
    • Description : 2 W GaN Amplifier Die from 2 to 20 GHz

General Parameters

    • Type : Power Amplifier
    • Configuration : Die
    • Industry Application : Military, Radar
    • Frequency : 2 to 20 GHz
    • Gain : 18 dB
    • Noise Figure : 4 dB
    • Saturated Power : 2.5 W
    • Impedance : 50 Ohms
    • Sub-Category : GaN Amplifier
    • Input Return Loss : 14 to 19 dB
    • Output Return Loss : 7 to 20 dB
    • Supply Voltage : 18 V
    • Package Type : Chip
    • Dimensions : 2.75 x 2.75 x 0.10 mm
    • Operating Temperature : -40 to 85 Degrees C
    • Storage Temperature : -55 to 125 Degrees C
  • RoHS : Yes
QPQ1907 Band Pass Filter by Qorvo

QPQ1907 Band Pass Filter by Qorvo

Courtesy of everything RF : QPQ1907 Band Pass Filter by Qorvo

The QPQ1907 from Qorvo is a 2.4 GHz Wi-Fi/BT/LTE Co-Existence BAW Band-Pass Filter. It has extremely steep skirts, simultaneously exhibiting low loss in the Wi-Fi band and high rejection near and in the 2.6 GHz bands. The filter can handle an input power of up to 28 dBm and operates over an extended temperature range from -20 to 95 degree Celcius.

The QPQ1907 is available in a 1.4 x 1.2 x 0.915 mm package and is ideal for IoT, Wireless Routers, Distributed or Mesh Wi-Fi and IEEE 802.11b/g/n/ac/ax WLAN Applications..

Product Details

    • Part Number : QPQ1907
    • Manufacturer : Qorvo
    • Description : 2.4 GHz Wi-Fi / BT / LTE Co-Existence BAW Filter

General Parameters

    • Type : BAW Filter
    • Application Industry : Wireless Infrastructure, Wireless Communication
    • Application : WiFi, Small Cell
    • Frequency : 2402.5 to 2481.5 MHz
    • Insertion Loss : 0.7 to 2.2 dB
    • Rejection : 7 to 61 dB
    • Power : 1 W
    • VSWR : 1.5:1, 1.8:1
    • Package Type : Surface Mount
    • Dimension : 1.4 x 1.2 x 0.915 mm
    • Operating_Temperature : -40 to 105 Degrees C
    • Storage_Temperature : -40 to 125 Degrees C
QPA1019 RF Amplifier

QPA1019 RF Amplifier by Qorvo

Courtesy of everything RF : QPA1019 RF Amplifier by Qorvo

The QPA1019 from Qorvo is a RF Amplifier with Frequency 4.5 to 7GHz, Small Signal Gain 30 dB, Saturated Power 10 W, PAE 40 %, Supply Voltage 22 V. Tags: Surface Mount, Power Amplifier. More details for QPA1019 can be seen below.

Product Details

    • Part Number : QPA1019
    • Manufacturer : Qorvo
    • Description : 10 Watt GaN Power Amplifier from 4.5 to 7 GHz

General Parameters

    • Type : Power Amplifier
    • Configuration : IC/MMIC/SMT
    • Industry Application : Radar, SATCOM
    • Frequency : 4.5 to 7GHz
    • Small Signal Gain : 30 dB
    • Saturated Power : 10 W
    • PAE : 40 %
    • Impedance : 50 Ohms
    • Sub-Category : GaN Amplifier
    • Supply Voltage : 22 V
    • Package Type : Surface Mount
    • Dimensions : 5.0 x 5.0 x 0.85 mm
    • Operating Temperature : -40 to 85 Degrees C
    • Storage Temperature : -55 to 150 Degrees C
Qorvo® Module Enables Cellular Vehicle-to-Everything Trials by Major Automakers

Qorvo® Module Enables Cellular Vehicle-to-Everything Trials by Major Automakers

Courtesy of Qorvo Module Enables Cellular Vehicle-to-Everything Trials by Major Automakers

INDUSTRY-LEADING FRONT-END MODULE IS AT THE HEART OF QUALCOMM’S C-V2X REFERENCE DESIGN

GREENSBORO, NC – January 2, 2019 – Qorvo® (Nasdaq:QRVO), a leading provider of innovative RF solutions that connect the world, is playing a key role in global field trials of cellular vehicle-to-everything (C-V2X) applications through a powerful front-end module (FEM), a key part of the Qualcomm 9150 chipset reference design. The superior linear output power and thermal management of the Qorvo FEM are essential to supporting the direct, real-time wireless safety communication system between vehicles, bicycles, pedestrians and infrastructure. C-V2X technology is a natural evolution toward the low latency and high bandwidth benefits of 5G for automotive applications.

Qorvo products are designed to solve the toughest automotive RF challenges and support both C-V2X and DSRC protocols. These products will be showcased in Las Vegas during CES (#CES2019), January 8-11, in Qorvo Booth 40943 at the Sands Expo.

Gartner Research estimates there will be 250 million connected vehicles on the roadways by 2020. The Qualcomm 9150 chipset, with the Qorvo QPF1002Q FEM, is currently part of C-V2X trials underway with Audi, PSA, Ford, Nissan and other ecosystem participants spanning projects in Europe, North America, China, Japan, and Korea.

Qorvo’s QPF1002Q is the leading FEM designed specifically to work with the Qualcomm 9150 chipset, providing higher linear output power and improved efficiency for lower temperature operation in automotive applications. This higher power operation results in enhanced range, improved accuracy and higher reliability essential to intelligent, onboard communication systems needed for the connected car and autonomous driving. Qorvo’s FEM includes an HBT PA, PHEMT LNA and PHEMT switch, which combine to enable superior performance over competing technologies.

Gorden Cook, general manager of Qorvo’s Transport business unit, said, “Connected cars of the future will require high levels of precise RF communication with other vehicles, infrastructure and even handsets. The performance, integration, and packaging of our C-V2X module is a key enabler for connected car field trials around the world. Qorvo has teamed with leading automotive OEMs to enable the advanced connectivity that will make connected cars safer, more reliable and more enjoyable.”

C-V2X operates at 5.9 GHz, which presents significant performance challenges to RF front-end components. The QPF1002Q meets the stringent requirements of C-V2X, including 3GPP Release 14 specifications for PC5-based direct communications. Qorvo offers this part with full AEC-Q100 automotive qualification at grade 2 from -40°C to +105°C. Engineering samples of the QPF1002Q are available now.

Qorvo offers a broad portfolio of automotive Wi-Fi, SDARS, GPS and LTE solutions. In addition to meeting ISO/TS 16949 certification, Qorvo performs AEC-Q100 and AEC-Q200 testing to ensure products meet stringent automotive industry requirements. Additional information about Qorvo’s automotive RF solutions, including Qorvo’s Connected Car For Dummies® ebook can be found here.

About Qorvo

Qorvo (Nasdaq:QRVO) makes a better world possible by providing innovative Radio Frequency (RF) solutions at the center of connectivity. We combine product and technology leadership, systems-level expertise and global manufacturing scale to quickly solve our customers’ most complex technical challenges. Qorvo serves diverse high-growth segments of large global markets, including advanced wireless devices, wired and wireless networks and defense radar and communications. We also leverage unique competitive strengths to advance 5G networks, cloud computing, the Internet of Things, and other emerging applications that expand the global framework interconnecting people, places and things. Visit www.qorvo.comto learn how Qorvo connects the world.

Qorvo is a registered trademark of Qorvo, Inc. in the U.S. and in other countries.

Investor Relations Contact:
Doug DeLieto
VP, Investor Relations
+1-336-678-8020
Media Contact:
Katie Caballero
Marketing Communications Manager
Qorvo Infrastructure and Defense Products
+1 972-994-8546
katie.caballero@qorvo.com

This press release includes “forward-looking statements” within the meaning of the safe harbor provisions of the Private Securities Litigation Reform Act of 1995. These forward-looking statements include, but are not limited to, statements about our plans, objectives, representations and contentions and are not historical facts and typically are identified by use of terms such as “may,” “will,” “should,” “could,” “expect,” “plan,” “anticipate,” “believe,” “estimate,” “predict,” “potential,” “continue” and similar words, although some forward-looking statements are expressed differently. You should be aware that the forward-looking statements included herein represent management’s current judgment and expectations, but our actual results, events and performance could differ materially from those expressed or implied by forward-looking statements. We do not intend to update any of these forward-looking statements or publicly announce the results of any revisions to these forward-looking statements, other than as is required under the federal securities laws. Qorvo’s business is subject to numerous risks and uncertainties, including variability in operating results, the inability of certain of our customers or suppliers to access their traditional sources of credit, our industry’s rapidly changing technology, our dependence on a few large customers for a substantial portion of our revenue, a loss of revenue if contracts with the U.S. government or defense and aerospace contractors are canceled or delayed, our ability to implement innovative technologies, our ability to bring new products to market and achieve design wins, the efficient and successful operation of our wafer fabrication facilities, assembly facilities and test and tape and reel facilities, our ability to adjust production capacity in a timely fashion in response to changes in demand for our products, variability in manufacturing yields, industry overcapacity and current macroeconomic conditions, inaccurate product forecasts and corresponding inventory and manufacturing costs, dependence on third parties and our ability to manage platform providers and customer relationships, our dependence on international sales and operations, our ability to attract and retain skilled personnel and develop leaders, the possibility that future acquisitions may dilute our shareholders’ ownership and cause us to incur debt and assume contingent liabilities, fluctuations in the price of our common stock, additional claims of infringement on our intellectual property portfolio, lawsuits and claims relating to our products, security breaches and other similar disruptions compromising our information and exposing us to liability, and the impact of stringent environmental regulations. These and other risks and uncertainties, which are described in more detail in Qorvo’s most recent Annual Report on Form 10-K and in other reports and statements filed with the Securities and Exchange Commission, could cause actual results and developments to be materially different from those expressed or implied by any of these forward-looking statements.

Qorvo QPD1025L

Qorvo QPD1025L

Courtesy of Qorvo QPD1025L

Qorvo’s QPD1025L was named a Gold Award winner in ’s 2018 Intelligent Aerospace Technology Innovation Awards! Learn more about the award-winning product here:

1800 Watt, 65 Volt, .96 – 1.215 GHz, GaN RF Input-Matched Transistor

Key Features

  • Frequency Range: .96- 1.215 GHz
  • Output Power (P3dB1): 1862 Watt
  • Linear Gain1: 22.5 dB
  • Typical PAE3dB1 77.2 %
  • Operating voltage: 65 V
  • CW and Pulse capable

Note1: @ 1.0GHz Load Pull

The Qorvo QPD1025L is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from .96to 1.215 GHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics and test instrumentation. The device can support both CW and pulsed operations.

Lead-free and ROHS compliant.

Parameters: 

Frequency Min(MHz) 960
Frequency Max(MHz) 1,215
Gain(dB) 22.5
Psat(dBm) 62.7
PAE(%) 77.2
VD(V) 65
Idq(mA) 1,500
Package Type NI-1230 (Eared)

Product Data Sheet Rev E – 11/2018