QPA2935 RF Amplifier by Qorvo
The QPA2935 from Qorvo is an MMIC Driver Amplifier that operates from 2.7 to 3.5 GHz. It delivers an output power of up to 2 W with a small signal gain of 28.4 dB and has a power-added efficiency of more than 52%. The amplifier is fabricated on Qorvo’s QGaN25 0.25 um GaN-on-SiC process and is matched to 50 ohms with integrated DC blocking caps on both I/O ports. It can support a range of bias voltages. The amplifier is available in a plastic overmold package that measures 4 x 4 mm and is suitable for civilian & military radars, and electronic warfare applications.
Product Details
- Part Number: QPA2935
- Manufacturer: Qorvo
- Description: S-Band GaN Driver Amplifier from 2.7 to 3.5 GHz
General Parameters
- Type: Power Amplifier, Driver Amplifier
- Configuration: IC/MMIC/SMT
- Application: Electronic Warfare, Radar
- Standards Supported: S Band
- Industry Application: Electronic Warfare, Military, Radar
- Frequency: 2.7 to 3.5 GHz
- Gain: 18 dB (Large Signal)
- Small Signal Gain: 28.4 dB
- Output Power: 34.3 dBm
- Output Power: 2.7 W
- Grade: Military, Commercial
- Saturated Power: 33 dBm
- Saturated Power: 2 W
- Input Power: 21 dBm (Max)
- Input Power: 0.125 W
- Power Dissipation: 11.5 W
- PAE: 54.8 %
- Impedance: 50 Ohms
- Pulsed/CW: CW
- Sub-Category: GaN Amplifier
- Return Loss: 7 to 15 dB
- Input Return Loss: 15
- Output Return Loss: 7 dB
- Harmonics: -27 dBc (2nd Harmonics), -43 dBc (3rd Harmonics)
- Supply Voltage: 25 V
- Current Consumption: 385 mA
- Quiscent Current: 29 mA
- Transistor Technology: 0.25 um GaN on SiC
- Technology: GaN
- Package Type: Surface Mount
- Dimensions: 4 x 4 x 0.85 mm
- Operating Temperature: -40 to 85 Degree C
- Storage Temperature: -55 to 125 Degree C
- RoHS: Yes
Courtesy of everything RF
