QPB2040N RF Amplifier by Qorvo

QPB2040N RF Amplifier by Qorvo

QPB2040N RF Amplifier by Qorvo

The QPB2040N from Qorvo is a Solid-State Amplifier that operates in the Ka-Band from 18 to 40 GHz. It delivers a saturated output power of 50 dBm (100 W) with a power gain of 11 dB and has a power-added efficiency of 9.8%. This GaN amplifier is based on Qorvo’s patented and field-proven Spatium combining technology that provides unprecedented Solid-State Power Amplifier (SSPA) performance in a rugged, compact, and lightweight package. It is an excellent alternative to traveling wave tube amplifiers and is the ideal building block for various millimeter-wave subsystems with wide-ranging applications. The amplifier requires a DC supply of 18 V and consumes 54 A of current.

The QPB2040N has an integrated bias card, which allows for the convenience of operation, reducing electrical losses in the bias networks, and weight reduction over using a separate bias card. The bias card also provides individualized bias settings for each amplifier blade in the Spatium SSPA. It is available in a module that measures 3.94 x 2.91 x 4.04 inches with a 2.92 mm (female) input connector and WRD-180 double-ridged output waveguide interface.

Product Details

  • Part Number: QPB2040N
  • Manufacturer: Qorvo
  • Description: 100 W Ka-Band GaN Solid-State Power Amplifier from 18 to 40 GHz

General Parameters

  • Type: Power Amplifier
  • Configuration: Module with Connector, Waveguide
  • Display Application: TWTA Replacement
  • Frequency: 18 to 40 GHz
  • Power Gain: 10 to 12 dB
  • Small Signal Gain: 13 to 17 dB
  • Gain Flatness: +1.4 / -1.1 dB
  • Output Power: 100 W
  • Output Power: 50 dBm
  • Grade: Commercial
  • Saturated Power: 49 to 51 dBm
  • Saturated Power: 80 to 126 W
  • Input Power: 39 dBm
  • Input Power: 8 W
  • PAE: 9.8
  • Impedance: 50 Ohms
  • Pulsed/CW: CW/Pulsed
  • Sub-Category: SSPA, TWT Replacement
  • Input Return Loss: 18 dB
  • Switching Time: 1.5 to 137 ns
  • Supply Voltage: 14 to 18 V
  • Current Consumption: 54 A
  • Quiscent Current: 40 A
  • Technology: GaN MMIC
  • Dimensions: 3.94 x 2.91 x 4.04 in.
  • Input Connector: 2.92 mm, 2.92 mm – Female
  • Output Connector: WRD-180 Double-Ridged
  • Weight: 2.77 kg
  • Operating Temperature: -40 to 71 Degree C
  • Storage Temperature: -40 to 85 Degree C
  • Waveguide: WRD-180
  • RoHS: Yes

Courtesy of everything RF

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