QPD1006 RF Transistor by Qorvo
The QPD1006 from Qorvo is a GaN-on-SiC HEMT Transistor that operates from 1.2 to 1.4 GHz. It provides a CW output power of 313 Watts with a gain of 17.5 dB and a pulsed power of 468 Watts with a gain of 17.8 dB and has a drain efficiency of over 55%. The device is internally matched to 50 ohms and is available in an industry-standard air cavity package. This RoHS-compliant GaN IMFET transistor is ideally suited for military and civilian radar applications and can support pulsed and CW operations.
Product Details
- Part Number: QPD1006
- Manufacturer: Qorvo
- Description: GaN-on-SiC HEMT Transistorfrom 1.2 to 1.4 GHz
General Parameters
- Transistor Type: HEMT
- Technology: GaN on SiC, GaN
- Application Industry: Aerospace & Defence, Radar, Wireless Infrastructure
- Application Type: Military Radar, Civilian Radar
- Application: Radar
- CW/Pulse: Pulse, CW
- Frequency: 1.2 to 1.4 GHz
- Power: 54.96 dBm(CW, at 3dB Compression), 56.7 dBm(Pulsed
- Power(W): 313 W(CW, at 3dB Compression), 468 W(Pulsed
- Pulsed Width: 100 us
- Duty_Cycle: 10%
- Gain: 17.5 dB(CW), 17.8 dB(Pulsed)
- Supply Voltage: 45 V(CW), 50 V(Pulsed)
- Current: 750 mA
- Package Type: Ceramic
- RoHS: Yes
- Operating Temperature: -40 to 85 Degree C
- Storage Temperature: -65 to 150 Degree C
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