QPD1025 RF Transistor by Qorvo

The QPD1025 from Qorvo is a discrete GaN on SiC HEMT that operates from 1.0 to 1.1 GHz. It provides a gain of 22.5 dB with a power added efficiency of 77.2%. This transistor has significantly better drain efficiency than LDMOS. It delivers an output power of 1800 W (P3dB) while operating on a 65 V supply. It is available in a standard air cavity package and is ideally suited for IFF, avionics and test instrumentation. The device can support both CW and pulsed operations.

Product Details

• Part Number: QPD1025
• Manufacturer: Qorvo
• Description: 1800 Watt, GaN on SiC Discrete Transistor from 1 to 1.1 GHz
  

General Parameters

• Transistor Type: HEMT
• Technology: GaN on SiC, GaN
• Application Industry: Aerospace & Defence, Test & Measurement, Avionics, Wireless Infrastructure
• Application: Test & Instrumentation
• CW/Pulse: CW, Pulse
• Frequency: 1 to 1.1 GHz
• Power: 62.7 dBm
• Power(W): 1862 W
• Gain: 22.5 dB
• Power Added Effeciency: 77.2 %
• Supply Voltage: 65 V
• Breakdown Voltage – Drain-Source: 225 V
• Voltage – Drain-Source (Vdss): 65 to 70 V
• Voltage – Gate-Source (Vgs): -2.8 V
• Drain Current: 28 A
• Drain Bias Current: 1.5 A
• Power Dissipation (Pdiss): 496 to 685 W
• Package Type: Flanged
• RoHS: Yes
• Operating Temperature: -40 to 85 Degree C
• Storage Temperature: -65 to 150 Degree C
  

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