QPA0016 RF Amplifier by Qorvo
The QPA0016 from Qorvo is a GaN MMIC Power Amplifier that operates from 13.75 to 14.5 GHz. It delivers an output power of 15 W (~42 dBm) with a small signal gain of 35 dB and a power-added efficiency (PAE) of 32%. This amplifier is fabricated using Qorvo’s production 0.15 µm GaN-on-SiC process (QGaN15) and has third-order intermodulation distortion products of 25 dBc. It is fully matched to 50 ohms with DC-grounded I/O ports to simplify system integration and provide optimum ESD performance. The amplifier has on-chip blocking capacitors following the DC ground on the input and output ports and is 100% DC and RF tested to ensure compliance with electrical specifications. It requires a DC supply of 24 V and draws a drain current (Quiescent) of 259 mA.
The QPA0016 is available in a package that measures 7.50 x 5.00 x 2.45 mm and is suitable for use in SATCOM and datalink applications.
Product Details
- Part Number: QPA0016
- Manufacturer: Qorvo
- Description: 15 W GaN MMIC Power Amplifier from 13.75 to 14.5 GHz
General Parameters
- Type: Power Amplifier
- Configuration: IC/MMIC/SMT
- Industry Application: SATCOM
- Frequency: 13.75 to 14.5 GHz
- Small Signal Gain: 35 dB
- Output Power: 5 to 15.84 W
- Grade: Commercial
- Linear Power: 37 dBm
- Input Power: 14 dBm
- PAE: 32 %
- Impedance: 50 Ohms
- Pulsed/CW: CW
- Sub-Category: GaN Amplifier
- Input Return Loss: 15 dB
- Output Return Loss: 6 dB
- Supply Voltage: 24 V
- Current Consumption: 259 mA
- Technology: GaN-on-SiC
- Package Type: Surface Mount
- Dimensions: 7.50 x 5.00 x 2.45 mm
- Operating Temperature: -40 to 85 Degree C
- Storage Temperature: -55 to 150 Degree C
- RoHS: Yes
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