Qorvo QPA1111

Qorvo QPA1111

Qorvo QPA1111

8.5 – 10.5 GHz 30 Watt GaN Power Amplifier

Key Features

  • Frequency Range: 8.5 – 10.5 GHz
  • Pout (Pin = 18 dBm): 45 dBm
  • PAE (Pin = 18 dBm): 45%
  • Power Gain (Pin = 18 dBm): 27 dBm
  • Small Signal Gain: 38 dB
  • Bias: Pulsed Vd = 22V, Idq = 620 mA, PW = 100 us, DC = 10%, Vg = -2.3 V typical
  • Package Dimensions: 6.0 x 6.0 x 0.85 mm

Qorvo’s QPA1111 is a high power, packaged X-Band MMIC amplifier fabricated using Qorvo’s production 0.15 um GaN-on-SiC process (QGaN15). The QPA1111 operates from 8.5 – 10.5 GHz, typically provides 30 W saturated output power with power-added efficiency of 45% and small signal gain of 38 dB.

To simplify system integration, the QPA1111 is fully matched to 50 ohms with DC grounded I/O ports for optimum ESD performance. Also, there are on-chip blocking capacitors following the DC grounds on the input and output ports.

The QPA1111 is ideal for supporting communications and radar applications in both commercial and military markets.

The QPA1111 is 100% DC and RF tested to ensure compliance to electrical specifications.

Lead-free and RoHS compliant.

Frequency Min (GHz) 8.5
Frequency Max (GHz) 10.5
Pout (dBm) 45
Gain (dB) 38 (S21)
PAE (%) 45
Voltage (V) 22
Current (mA) 620
Package Type QFN
Package (mm) 6.0 x 6.0 x 0.85
RoHS Yes
Lead Free Yes
Halogen Free Yes
ITAR Restricted No

Data Sheets: Product Data Sheet, Rev A – 02/2024

CAD Layout Files: PCB Symbol, Footprint & 3D Model (provided by SamacSys)

PCB Layout Files: Gerber PCB Layout Files

S-Parameters: S-Parameters (22 V @ 620 mA)

Get in touch for orders or any queries: sales@rfdesign.co.za / +27 21 555 8400

Courtesy of everythingRF

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