QPD2560L RF Transistor by Qorvo
The QPD2560L from Qorvo is a RF Transistor with Frequency 1.1 to 1.5 GHz, Power 49.7 to 52.5 dBm, Power(W) 93.3 to 177.8 W, Saturated Power 55.4 dBm, Duty_Cycle 0.1. Tags: Flanged. More details for QPD2560L can be seen below.
Product Details
- Part Number: QPD2560L
- Manufacturer: Qorvo
- Description: 300 W, GaN on SiC RF Transistor from 1.1 to 1.5 GHz
General Parameters
- Transistor Type: HEMT
- Technology: GaN on SiC
- Application Industry: ISM, Radar, Broadcast, Communication
- Application: Test & Instrumentation, Jammers, Industrial, Electronic Warfare, Military, L Band, Medical, Medical
- CW/Pulse: Pulse, CW
- Frequency: 1.1 to 1.5 GHz
- Power: 49.7 to 52.5 dBm
- Power(W): 93.3 to 177.8 W
- Saturated Power: 55.4 dBm
- Pulsed Width: 100 uS
- Duty_Cycle: 0.1
- Gain: 15.3 to 18.5 dB
- Power Added Effeciency: 55.7 to 77.6%
- Supply Voltage: 50 V (Drain)
- Input Power: 43 dBm
- Current: 440 mA (Drain)
- Drain Efficiency: 55.7 to 77.6%
- Drain Current: 12 A
- Quiescent Drain Current: 440 mA
- Power Dissipation (Pdiss): 127 to 285 W
- Package Type: Flanged
- Dimension: 29 x 5.84 mm
- RoHS: Yes
- Grade: Military
- Operating Temperature: -40 to 85 Degree C
- Storage Temperature: -65 to 150 Degree C
Get in touch for orders or any queries: sales@rfdesign.co.za / +27 21 555 8400
Courtesy of everythingRF
