QPL1000 RF Amplifier by Qorvo

The QPL1000 from Qorvo is a GaN Low Noise Amplifier that operates from 8 to 11 GHz. It delivers a small signal gain of 27 dB with a noise figure of 1.7 dB. The LNA is fabricated using Qorvo’s production 0.25 um, GaN (Gen II) process which enables it to withstand an input power of up to 5 W, while delivering a saturated power of 15 dBm with low IM3 levels of −24 dBc (at Pout= +6 dBm / tone). It requires a DC supply of 10 V and consumes 20 mA of current. This RoHS compliant amplifier is matched to 50 ohms and has integrated DC blocking caps on both I/O ports for easy handling and simple system integration. It is available in a plastic over-mold QFN package that measures 4.00 x 4.00 x 0.85 mm and is ideal for satellite communications, point-to-point communications, defense & aerospace communications, electronic warfare, and RADAR applications.

 

Product Details

• Part Number: QPL1000
• Manufacturer: Qorvo
• Description: GaN Low Noise Amplifier from 8 to 11 GHz

General Parameters

• Type: Low Noise Amplifier
• Configuration: IC/MMIC/SMT
• Application: Communication, Point to point communication
• Industry Application: SATCOM
• Frequency: 8 to 11 GHz
• Small Signal Gain: 27 dB
• Noise Figure: 1.7 dB
• P1dB: 9 dBm
• P1dB: 0.007 W
• Grade: Commercial, Space
• Saturated Power: 15 dBm
• Saturated Power: 0.0316 W
• Input Power: 37 dBm
• Input Power: 5 W
• Impedance: 50 Ohms
• Pulsed/CW: CW
• Sub-Category: GaN Amplifier
• Input Return Loss: 13 dB
• Output Return Loss: 12 dB
• Supply Voltage: 10 V
• Current Consumption: 20 mA
• Package Type: Surface Mount
• Package: Plastic Over-mold Package
• Dimensions: 4.0 x 4.0 x 0.85 mm
• Operating Temperature: -40 to 95 Degree C
• Storage Temperature: -55 to 150 Degree C
• RoHS: Yes

Courtesy of everything RF