QPD1034 RF Amplifier by Qorvo
The QPD1034 from Qorvo is a High-Power Amplifier that operates from 960 to 1215 MHz. It delivers an output power of 1734 W (P3dB) with a linear gain of 19.4 dB and has an efficiency of 61.6%. This amplifier is manufactured using GaN-on-SiC HEMT technology that ensures optimal performance and high reliability. It can be used for both CW and Pulse applications. The amplifier requires a DC supply of 65 V and consumes less than 685 W of power. This RoHS compliant amplifier is available in a module with coaxial connectors that measures 4.250 x 2.235 x 0.640 inches. It is ideal for use in DME radars, avionics, IFF transponders, and test instrumentation applications.
Product Details
- Part Number: QPD1034
- Manufacturer: Qorvo
- Description: 1700 Watt GaN-on-SiC Power Amplifier from 960 to 1215 MHz
General Parameters
- Type: Power Amplifier
- Configuration: Module with Connector
- Application: Avionics
- Display Application: DME Radar, IFF Transponders
- Industry Application: Test & Measurement, Radar
- Frequency: 0.96 to 1.215 GHz
- Gain: 19.4 dB (Linear)
- Output Power: 62.3 dBm
- Output Power: 1700 W
- Grade: Commercial
- IP3: 62.4 dBm
- IP3: 1734 W
- Input Power: 46.2 dBm
- Input Power: 41.6 W
- Power Dissipation: 685 to 1209 W
- Pulsed/CW: CW/Pulsed
- Pulse Width: 100 us
- Duty Cycle: 10%
- VSWR: 2.0:1
- Sub-Category: Pallet Amplifier
- Supply Voltage: 65 V
- Quiscent Current: 1.5 A
- Transistor Technology: GaN on SiC HEMT
- Technology: GaN
- Dimensions: 4.25 x 2.235 x 0.64 in.
- Operating Temperature: -40 to 85 Degree C
- Storage Temperature: -65 to 150 Degree C
- RoHS: Yes
- Note: Drain Efficiency: 61.6% ; Gain at 3dB: 16.4 dB ; Gate Voltage: -7 to +2 V
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