QPD1018 RF Transistor by Qorvo

The QPD1018 from Qorvo is a GaN-on-SiC HEMT that operates from 2.7 to 3.1 GHz. It delivers an output power of more than 500 W (P3dB) with a linear gain of 17.7 dB and has a Power Added Efficiency (PAE) of 67.9%. This transistor is based on GaN IMFET technology, requires a DC supply of 50 V, and consumes 750 mA of current. It is available in a surface-mount air cavity package that measures 17.40 x 24.00 x 4.31 mm and is ideal for military radar, civilian radar, and test instrumentation applications. This transistor is internally matched to 50 ?.

Product Details

• Part Number: QPD1018
• Manufacturer: Qorvo
• Description: 500 W GaN HEMT from 2.7 to 3.1 GHz for Military Radar

General Parameters

• Transistor Type: HEMT
• Technology: GaN on SiC, GaN
• Application Industry: Radar, Aerospace & Defence, Test & Measurement
• Application: Military Radar
• CW/Pulse: Pulse
• Frequency: 2.7 to 3.1 GHz
• Power: 56.99 dBm
• Power(W): 500.03 W
• OIP3: 57.6 dBm
• Pulsed Width: 100 us
• Duty_Cycle: 10 %
• Gain: 17.7 dB
• Power Added Effeciency: 67.9 %
• Supply Voltage: 28 to 55 V
• Voltage – Gate-Source (Vgs): -2.8 V
• Drain Current: 15 to 20 A
• Drain Bias Current: 750 mA
• Quiescent Drain Current: 750 mA
• Power Dissipation (Pdiss): 522 W
• Impedance Zs: 50 Ohms
• Package Type: Surface Mount
• Package: 17.4 x 24 x 4.3 mm
• RoHS: Yes
• Grade: Commercial, Military
• Operating Temperature: -40 to 85 Degree C
• Storage Temperature: -65 to 150 Degree C

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