QPD1425L RF Transistor by Qorvo
The QPD1425L from Qorvo is a High-Electron-Mobility Transistor (HEMT) that operates from 1.2 to 1.4 GHz. It delivers a saturated output power of 316 W (~55 dBm) with a large signal gain of 17 dB and a drain efficiency of 70%. This transistor is manufactured using a gallium-nitride (GaN) on silicon carbide (SiC) process and supports both CW and pulsed operations. It requires a DC supply of 65 V and consumes less than 430 mA of current. The HEMT is housed in an air cavity surface-mount package that measures 10.16 x 10.16 x 4.06 mm and is ideal for Radar applications.
Product Details
- Part Number: QPD1425L
- Manufacturer: Qorvo
- Description: 300 W CW/Pulsed GaN HEMT from 1.2 to 1.4 GHz for Radar Applications
General Parameters
- Transistor Type: HEMT
- Technology: GaN on SiC
- Application Industry: ISM, Radar
- CW/Pulse: CW, Pulse
- Frequency: 1200 to 1400 MHz
- Power: 55 dBm (Psat)
- Power(W): 300 W (Psat)
- Power Gain (Gp): 17 dB
- Supply Voltage: 65 V
- Current: 430 mA
- Drain Efficiency: 70 %
- Package Type: 2-Hole Flanged
- Dimension: 10.16 x 10.16 x 4.06 mm
- RoHS: Yes
- Grade: Commercial
Courtesy of everything RF
