QPA0708T GaN Power Amplifier by Qorvo
7.9 - 8.4 GHz 60 Watt GaN Power Amplifier
Key Features
- Frequency Range: 7.9 - 8.4 GHz
- PSAT (PIN=18 dBm): 48.6 dBm
- PAE (PIN=18 dBm): 49.3 %
- Power Gain (PIN=18 dBm): 30.6 dB
- IMD3 (at 42 dBm/tone): −25 dBc
- Small Signal Gain: 36 dB
- Bias: VD = 26 V, IDQ = 904 mA
- Tab dimensions: 5.817 mm x 6.172 mm x 0.254 mm
Qorvo’s QPA0708T is a power amplifier fabricated on Qorvo’s 0.25um GaN on SiC process (QGaN25), mounted to a high thermal conductivity tab. Operating between 7.9 and 8.4 GHz, it achieves 36 dB small signal gain, 32 W linear power with −25 dBc intermodulation distortion products, and saturated output power of 72 W with a power-added efficiency of 49.3 %.
QPA0708T is ideally suited to support satellite communications.
To simplify system integration, the QPA0708T is fully matched to 50 ohms, with the DC shorted on the RF input port and integrated DC blocking caps on the RF output port.
The QPA0708T die is 100% DC and RF tested on-wafer to ensure compliance to electrical specifications.
Lead-free and RoHS compliant.
| Frequency Min(GHz) | 7.9 |
| Frequency Max(GHz) | 8.4 |
| Psat(dBm) | 48.6 |
| Gain(dB) | 36 |
| PAE(%) | 49 |
| Voltage(V) | 26 |
| Current(mA) | 904 |
| Package Type | Die on Tab |
| Package(mm) | 5.817 x 6.172 x 0.254 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | 3A001.B.2.B.1 |
Data Sheets
Product Data Sheet
Rev A – 02/2024
CAD Layout Files
PCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout Files
S-Parameters
Courtesy of Qorvo
