QPD1035 DC-6 GHz, 40 Watt, 50 Volt GaN RF Power Transistor by Qorvo

Key Features

• Frequency range: DC – 6 GHz
• Drain Voltage: 50 V
• Output Power (P3dB): 50 W
• Drain Efficiency (P3dB): 52.2%
• Linear Gain: 15.1dB
• Low thermal resistance package

The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant.

Gain, P3dB, and Drain Efficiency values – typical EVB performance at 5.65 GHz.

Frequency Min(MHz)	DC
Frequency Max(MHz)	6,000
Gain(dB)	12.1 (Gain at P3dB)
Psat(dBm)	47 (P3dB)
Drain Efficiency(%)	52.2
Vd(V)	50
Idq(mA)	65
Package(mm)	4.1 x 5.1

Data Sheets

Product Data Sheet: Rev A – 05/2024

CAD Layout Files

PCB Symbol, Footprint & 3D Model (provided by SamacSys)

Courtesy of Qorvo