QPD1028 RF Transistor by Qorvo
The QPD1028 from Qorvo is a RF Transistor with Frequency 1.2 to 1.4 GHz, Power 57.4 to 59.6 dBm, Power(W) 549.54 to 912.01 W, Duty_Cycle 0.1, Gain 16.8 to 19.4 dB. Tags: Surface Mount. More details for QPD1028 can be seen below.
Product Details
- Part Number: QPD1028
- Manufacturer: Qorvo
- Description: GaN on SiC RF Transistor from 1.2 to 1.4 GHz
General Parameters
- Transistor Type: HEMT
- Technology: GaN on SiC
- Application Industry: Radar
- Application: L Band, ISM Band
- CW/Pulse: CW, Pulse
- Frequency: 1.2 to 1.4 GHz
- Power: 57.4 to 59.6 dBm
- Power(W): 549.54 to 912.01 W
- Pulsed Width: 100 us
- Duty_Cycle: 0.1
- Gain: 16.8 to 19.4 dB
- VSWR: 1.10:1
- Class: Class 1A, Class C3
- Supply Voltage: 65 V
- Input Power: 45.2 dBm
- Voltage – Drain-Source (Vdss): 65 V
- Voltage – Gate-Source (Vgs): -2.7 V
- Drain Efficiency: 62.7 to 76.7%
- Drain Current: 19000 mA
- Drain Bias Current: 750 mA
- Gate Leakage Current (Ig): -40 mA
- Power Dissipation (Pdiss): 238 to 400 W
- Impedance Zs: 50 Ohms
- Package Type: Surface Mount
- RoHS: Yes
- Operating Temperature: -40 to 85 Degree C
- Storage Temperature: -65 to 150 Degree C
- Note: Linear Gain: 19.8 dB
Courtesy of everythingRF
