SGC0910-200B-R by Sumitomo Electric Device Innovations

SGC0910-200B-R by Sumitomo Electric Device Innovations

SGC0910-200B-R by Sumitomo Electric Device Innovations

Part Number SGC0910-200B-R
Class GaN Product > GaN HEMTs for Radar > C/X
Outline / Package Code
IK
Function X-Band Internally Matched GaN-HEMT
Features
Description The SGC0910-200B-R is a high power GaN-HEMT that is internally matched for X-band radar bands to provide optimum power and gain in a 50Ω system.
Datasheet (495KB)
Frequency f (GHz) 9.2 – 10.5
Pout (dBm) 53.5 (-10.1) / 52.5 (10.1-)
Gp (dB) 9.5 (-10.1) / 8.5 (10.1-)
Efficiency (%) 39
VDS (V) 50
IDS (DC) (A) 0.66
Rth (°C/W) 0.6
Conditions Pulse Width: 100 µsec, Duty 10%
Note Tc(op) = +25°C

Courtesy of Sumitomo Electric Device Innovations

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