Sumitomo Electric's GaN-HEMT SGN2731-800L-R Part Number SGN2731-800L-R Class GaN Product > GaN HEMTs for Radar Outline / Package Code M2C Function High Voltage - High Power GaN-HEMT for Radar Features High Power: 1000W (Typ.) High Efficiency: 62% (Typ.) Broad Band: 2.7 to 3.1GHz Ease of Matching: Input / Output Pre-matched for 3.1GHz Small Flangeless Package...

Sumitomo Electric's GaN-HEMT SGN2833-200L-R Part Number SGN2833-200L-R Class GaN Product > GaN HEMTs for Radar Outline / Package Code IV Function High Voltage - High Power GaN-HEMT for Radar Features High Power: 280W (Typ.) @ Pin = 16W (42dBm) High Efficiency: 60% (Typ.) @ Pin = 16W (42dBm) Broad Band: 2.75 to 3.3GHz Impedance Matched...

SGCB056M1H-R by Sumitomo Electric Device Innovations Product Specifications Part Number SGCB056M1H-R Class GaN Product > GaN HEMTs for Radar Outline / Package Code M1H Function DC - 3.5GHz High Power GaN-HEMT Features High Power GaN HEMT for DC to 3.5GHz High Power: 67W @ 3.5GHz High Efficiency: 60% @ 3.5GHz Broadband Operation Small Flangeless Package...

SGNL130M1H by Sumitomo Electric Device Innovations Part Number SGNL130M1R Class GaN Product > GaN HEMTs for General Purpose Outline / Package Code M1R Function DC - 3GHz High Power GaN-HEMT Features High Power GaN HEMT for DC to 3GHz High Power : 150W @ 3GHz High Efficiency: 57% @ 3GHz CW Operable Easy of Matching:...

SGNL130M1H by Sumitomo Electric Device Innovations Part Number SGNL130M1H Class GaN Product > GaN HEMTs for General Purpose Outline / Package Code M1H Function DC - 3GHz High Power GaN-HEMT Features High Power GaN HEMT for DC to 3GHz High Power: 150W @ 3GHz High Efficiency: 57% @ 3GHz CW Operable Easy Matching: Input Pre-matched...

SGC9395-300B-R by Sumitomo Electric Device Innovations Part Number SGC9395-300B-R Class GaN Product > GaN HEMTs for Radar > Marine Outline / Package Code IK Function X-Band Internally Matched GaN-HEMT Features High Output Power: Psat=55.3dBm (Typ.) High Gain: Gp=9.3dB (Typ.) High Power Added Efficiency: PAE=38% (Typ.) Broad Band: 9.3 to 9.5GHz Impedance Matched Zin/Zout = 50Ω...

SGC0910-200B-R by Sumitomo Electric Device Innovations Part Number SGC0910-200B-R Class GaN Product > GaN HEMTs for Radar > C/X Outline / Package Code IK Function X-Band Internally Matched GaN-HEMT Features High Output Power: Psat = 53.5 dBm (Typ.) High Gain: Gp = 9.5 dB (Typ.) High Power Added Efficiency: PAE = 39% (Typ.) Broad Band:...

SGN2425-300P RF Transistor by Sumitomo Electric Device Innovations The SGN2425-300P from Sumitomo Electric is a GaN HEMT Transistor that operates from 2.4 to 2.5 GHz. It delivers CW peak power of 300 W with a power gain of 50 dB and a drain efficiency of 74%. This transistor has a power density of 10 to 20 W/mm...

Sumitomo Electric's GaN-HEMT SGNL005Z2K-R Get in touch for orders or any queries: sales@rfdesign.co.za / +27 21 555 8400 Courtesy of Sumitomo Electric