Qorvo QPD1017

The QPD1017 from Qorvo is an internally matched discrete GaN on SiC HEMT that operates from 3.1 to 3.5 GHz. It provides a saturated output power of 56.6 dBm (457 W) with a gain of 16.5 dB and has a PAE of 60%. The transistor requires a supply voltage of 50 V and consumes up to 750 mA of current. It is GaN IMFET fully matched to 50 ohm in an industry standard air cavity package and is ideally suited for military radar, civilian radar and test instrumentation.

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Product Specifications

  • Manufacturer:
    Qorvo
  • Description:
    450 W GaN RF IMFET from 3.1 to 3.5 GHz
  • Transistor Type:
  • Application Type:
    Military, Radar
  • Grade:
    Military, Commercial
  • Frequency:
    3.1 to 3.5 GHz
  • Gain:
    16 dB
  • Power:
    450 dBm
  • Supply Voltage
    50 V
  • Power Added Effeciency
    0.57
  • Saturated Power
    450 dBm
  • RoHS
    Yes

 

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