Courtesy of Qorvo QPD1025L
Qorvo’s QPD1025L was named a Gold Award winner in @MilAero’s 2018 Intelligent Aerospace Technology Innovation Awards! Learn more about the award-winning product here:
1800 Watt, 65 Volt, .96 – 1.215 GHz, GaN RF Input-Matched Transistor
Key Features
- Frequency Range: .96- 1.215 GHz
- Output Power (P3dB1): 1862 Watt
- Linear Gain1: 22.5 dB
- Typical PAE3dB1 77.2 %
- Operating voltage: 65 V
- CW and Pulse capable
Note1: @ 1.0GHz Load Pull
The Qorvo QPD1025L is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from .96to 1.215 GHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics and test instrumentation. The device can support both CW and pulsed operations.
Lead-free and ROHS compliant.
Parameters:
| Frequency Min(MHz) | 960 |
| Frequency Max(MHz) | 1,215 |
| Gain(dB) | 22.5 |
| Psat(dBm) | 62.7 |
| PAE(%) | 77.2 |
| VD(V) | 65 |
| Idq(mA) | 1,500 |
| Package Type | NI-1230 (Eared) |