The QPA1006D from Qorvo is a wide-band GaN on SiC based power amplifier that operates from 10.7 to 12.7 GHz. It provides an output power of more than 35 watts (46 dBm) and a gain of over 17 dB. The amplifier requires a supply voltage of 20 V.
The RF ports of the QPA1006D have DC blocking capacitors and are matched to 50 ohms. The amplifier is available as a die that measures 6.09 x 4.24 x 0.10 mm. It supports a wide range of operating conditions and is suitable for Radar, SATCOM and Point to point communication applications.
Product Details
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- Part Number : QPA1006D
- Manufacturer : Qorvo
- Description : 35 W GaN on SiC Power Amplifier from 10.7 to 12.7 GHz
General Parameters
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- Type : Power Amplifier
- Configuration : Die
- Industry Application : Radar, SATCOM
- Frequency : 10.7 to12.7 GHz
- Gain : 17 dB
- Small Signal Gain : 21.5 dB
- Saturated Power : 40 W
- PAE : 39 %
- Impedance : 50 Ohms
- Sub-Category : GaN Amplifier
- Input Return Loss : 17 to 26 dB
- Output Return Loss : 5 to 9 dB
- Supply Voltage : 20 V
- Current Consumption : 1200 mA
- Operating Temperature : -40 to 85 Degrees C
- Storage Temperature : -55 to 125 Degrees C
- RoHS : Yes
