QPA1006D

QPA1006D RF Amplifier by Qorvo

The QPA1006D from Qorvo is a wide-band GaN on SiC based power amplifier that operates from 10.7 to 12.7 GHz. It provides an output power of more than 35 watts (46 dBm) and a gain of over 17 dB. The amplifier requires a supply voltage of 20 V.

The RF ports of the QPA1006D have DC blocking capacitors and are matched to 50 ohms. The amplifier is available as a die that measures 6.09 x 4.24 x 0.10 mm. It supports a wide range of operating conditions and is suitable for Radar, SATCOM and Point to point communication applications.

Product Details

    • Part Number : QPA1006D
    • Manufacturer : Qorvo
    • Description : 35 W GaN on SiC Power Amplifier from 10.7 to 12.7 GHz

General Parameters

    • Type : Power Amplifier
    • Configuration : Die
    • Industry Application : Radar, SATCOM
    • Frequency : 10.7 to12.7 GHz
    • Gain : 17 dB
    • Small Signal Gain : 21.5 dB
    • Saturated Power : 40 W
    • PAE : 39 %
    • Impedance : 50 Ohms
    • Sub-Category : GaN Amplifier
    • Input Return Loss : 17 to 26 dB
    • Output Return Loss : 5 to 9 dB
    • Supply Voltage : 20 V
    • Current Consumption : 1200 mA
    • Operating Temperature : -40 to 85 Degrees C
    • Storage Temperature : -55 to 125 Degrees C
    • RoHS : Yes
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